Origins of Light Emission and Efficiency Saturation of the Photoluminescence of GaN Nanocrystallites

Abstract

The photoluminescence (PL) properties of GaN nanorods were studied utilizing UV micro-photoluminescence. The room temperature PL of the GaN nanorods exhibits one strong emission line. The PL intensity as a function of the laser power was investigated in order to determine whether this emission originates from an excitonic or a bandgap recombination process. Our analysis indicates that the PL of the rods is excitonic-like and very similar to the behavior of the free exciton A in GaN thin films. However, for a relatively large and compact ensemble of rods, the PL intensity exhibits a significant saturation occurring already at relatively low laser power. We attribute the intensity saturation to the laser heating and heat trapping which takes place in the enclosure of the ensemble.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    Semiconductors and semimetals, Vol. 50 and 57, edited by J. I. Pankove and T. D. Moustakas (Academic, San Diego, 1999).

  2. 2.

    H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994).

    CAS  Article  Google Scholar 

  3. 3.

    R. Dingle, D. D. Sell, S. E. Stokowski, and M. Ilegems, Phys. Rev. B 4, 1211 (1971).

    Article  Google Scholar 

  4. 4.

    B. Monemar, Phys. Rev. B 10, 676 (1974).

    CAS  Article  Google Scholar 

  5. 5.

    J. I. Pankove, J. E. Berkeyheiser, H. P. Maruska, and J. Wittke, Solid State Commun. 8, 1051 (1970).

    CAS  Article  Google Scholar 

  6. 6.

    A. P. Purdy, Chem. Matter. 11, 1648 (1999).

    CAS  Article  Google Scholar 

  7. 7. a)

    L. Bergman, X. B. Chen, J. Feldmeier, and A. P. Purdy, Appl. Phys. Lett. 83, 764 (2003). b)_L. Bergman, et. al. MRS Proceedings V. 776, Q1.1 (spring 2003)

    CAS  Article  Google Scholar 

  8. 8.

    W. -Q. Han, and A. Zettl, Appl. Phys. Lett. 81, 5051 (2002).

    CAS  Article  Google Scholar 

  9. 9.

    M. W. Lee, H. Z. Twu, C. -C. Chen, and C. -H. Chen, Appl. Phys. Lett. 79, 3693 (2001).

    CAS  Article  Google Scholar 

  10. 10.

    X. Duan and C. M. Lieber, J. Am. Chem. Soc. 122, 188 (2000).

    CAS  Article  Google Scholar 

  11. 11.

    Shirong Jin, Yanlan Zheng, and Aizhen Li, J. Appl. Phys. 82, 3870 (1997).

    CAS  Article  Google Scholar 

  12. 12.

    T. Taguchi, J. Shirafuji, and Y. Inuishi, Phys. Status Solidi B 68, 727 (1975).

    CAS  Article  Google Scholar 

  13. 13.

    D. E. Cooper, J. Bajaj, and P. R. Newmann, J. Cryst. Growth 86, 544 (1988).

    CAS  Article  Google Scholar 

  14. 14.

    Z. C. Feng, A. Mascarenhas, and W. J. Choyke, J. Lumin. 35, 329 (1986).

    CAS  Article  Google Scholar 

  15. 15.

    Q. Kim and D. W. Langer, Phys. Status Solidi B 122, 263 (1984).

    CAS  Article  Google Scholar 

  16. 16.

    T. Schmidt, K. Lischka, and W. Zulehner, Phys. Rev. B 45, 8989 (1992).

    CAS  Article  Google Scholar 

  17. 17.

    J. E. Fouquet and A. E. Siegman, Appl. Phys. Lett. 46, 280 (1984).

    Article  Google Scholar 

  18. 18.

    J. I. Pankove, Optical processes in semiconductors (Dover publications, New York), pp. 166.

  19. 19.

    A. V. Rodina, M. Dietrich, A. Göldner, L. Eckey, A. Hoffmann, Al. L. Efros, M. Rosen, and B. K. Meyer, Phys. Rev. B 64, 115204 (2001).

    Article  Google Scholar 

  20. 20.

    Claude Weisbuch, Borge Vinter, Quantum semiconductor structures (Academic Press, INC. Boston, 1991).

    Google Scholar 

  21. 21.

    S. Murugkar, R. Merlin, A. Botchkarev, A. Salvador, H. Morkoc: J. Appl. Phys. 77, 6042 (1995).

    CAS  Article  Google Scholar 

  22. 22.

    L. Bergman, M. Dutta, and R.J. Nemanich, “Raman Analysis of Wide Band Gap Nitrides; Film, Crystals, and Superlatices”, In Raman Scattering in Materials Science Science p. 273 (Editors: R. Merlin and W.H. Weber, Springer Verlag 2000).

    Google Scholar 

Download references

Acknowledgments

Leah Bergman gratefully acknowledges NSF CAREER DMR-0238845, NSF-EPS-0132626. Andrew Purdy gratefully acknowledges the Office of Naval Research.

Author information

Affiliations

Authors

Corresponding author

Correspondence to Xiang-Bai Chen.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Chen, XB., Morrison, J.L., Penner, M.K. et al. Origins of Light Emission and Efficiency Saturation of the Photoluminescence of GaN Nanocrystallites. MRS Online Proceedings Library 798, 659–664 (2003). https://doi.org/10.1557/PROC-798-Y5.73

Download citation