Origins of Light Emission and Efficiency Saturation of the Photoluminescence of GaN Nanocrystallites

MRS Online Proceedings Library volume 798, pages659–664(2003)Cite this article

Abstract

The photoluminescence (PL) properties of GaN nanorods were studied utilizing UV micro-photoluminescence. The room temperature PL of the GaN nanorods exhibits one strong emission line. The PL intensity as a function of the laser power was investigated in order to determine whether this emission originates from an excitonic or a bandgap recombination process. Our analysis indicates that the PL of the rods is excitonic-like and very similar to the behavior of the free exciton A in GaN thin films. However, for a relatively large and compact ensemble of rods, the PL intensity exhibits a significant saturation occurring already at relatively low laser power. We attribute the intensity saturation to the laser heating and heat trapping which takes place in the enclosure of the ensemble.

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Acknowledgments

Leah Bergman gratefully acknowledges NSF CAREER DMR-0238845, NSF-EPS-0132626. Andrew Purdy gratefully acknowledges the Office of Naval Research.

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Affiliations

  1. Department of Physics, University of Idaho, Moscow, ID, 83844–0903, USA

    Xiang-Bai Chen, John L. Morrison, Margaret K. Penner, Jennifer Elle & Leah Bergman

  2. Chemistry Division, US Naval Research Laboratory, Washington DC, 20375, USA

    Andrew P. Purdy

Authors
  1. Xiang-Bai Chen
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  2. John L. Morrison
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  3. Margaret K. Penner
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  4. Jennifer Elle
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  5. Leah Bergman
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  6. Andrew P. Purdy
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Correspondence to Xiang-Bai Chen.

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Chen, XB., Morrison, J.L., Penner, M.K. et al. Origins of Light Emission and Efficiency Saturation of the Photoluminescence of GaN Nanocrystallites. MRS Online Proceedings Library 798, 659–664 (2003). https://doi.org/10.1557/PROC-798-Y5.73

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