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Optical evaluation of pretreated InGaN quantum well structures

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Acknowledgments

The authors would like to thank S.Bader and V.Härle (OSRAM Opto Semiconductors) for their help with the LED device fabrication. This work was supported by the European Union within the framework of the DENIS project (contract No. G5RD-CT-2001-00566).

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Authors and Affiliations

  1. Universität Bremen, PO Box 330440, 28334, Bremen, Germany

    T. Böttcher, A. Ueta & D. Hommel

  2. Universität Magdeburg, PO Box 4120, 39016, Magdeburg, Germany

    F. Bertram & J. Christen

  3. Linköping Universitet, SE-581 83, Linköping, Sweden

    P. Bergman

Authors
  1. T. Böttcher
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  2. F. Bertram
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  3. P. Bergman
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  4. A. Ueta
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  5. J. Christen
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  6. D. Hommel
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Böttcher, T., Bertram, F., Bergman, P. et al. Optical evaluation of pretreated InGaN quantum well structures. MRS Online Proceedings Library 798, 598–603 (2003). https://doi.org/10.1557/PROC-798-Y5.59

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  • DOI: https://doi.org/10.1557/PROC-798-Y5.59

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