Spectroscopy of Intraband Electron Confinement in Self-Assembled GaN/AlN Quantum Dots

MRS Online Proceedings Library volume 798, pages575–579(2003)Cite this article

Abstract

We present a detailed analysis of inter- and intraband transitions in GaN/AlN self-organized quantum dots grown on sapphire, silicon (111) and 6H-SiC substrates. Quantum dot samples have been characterized by means of transmission electron microscopy, photoluminescence and photo-induced absorption spectroscopy. Interlevel transitions in the conduction band are observed in the 0.52–0.98 eV energy range, thus covering the telecommunication band. The s-pz absorption is peaked at 0.8 eV (0.52 eV) for samples with dot height of 1.5 nm (6 nm). Calculations show that in bigger dots the transition energy is governed by the value of the internal field.

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Affiliations

  1. Action OptoGaN, Institut d'Electronique Fondamentale, UMR8622 CNRS, Bât.220 Université Paris-Sud, 91405, Orsay, France

    Ana Helman, Khalid Moumanis, Maria Tchernycheva, Alain Lusson & Francois Julien

  2. Centre de Recherche sur l'Hétéroepitaxie et ses Applications, CNRS, rue B. Gregory, Sophia Antipolis, 06560, Valbonne, France

    Benjamin Damilano, Nicolas Grandjean & Jean Massies

  3. CEA/CNRS Research Group “Nanophysique et Semiconducturs”, DRFMC/SPMM, CEA/Grenoble, 17 rue des Martyrs, 38054, Grenoble, France

    Christophe Adelmann, Frederic Fossard, Daniel Le Si Dang & Bruno Daudin

Authors
  1. Ana Helman
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  2. Khalid Moumanis
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  3. Maria Tchernycheva
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  4. Alain Lusson
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  5. Francois Julien
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  6. Benjamin Damilano
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  7. Nicolas Grandjean
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  8. Jean Massies
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  9. Christophe Adelmann
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  10. Frederic Fossard
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  11. Daniel Le Si Dang
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  12. Bruno Daudin
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Correspondence to Ana Helman.

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Helman, A., Moumanis, K., Tchernycheva, M. et al. Spectroscopy of Intraband Electron Confinement in Self-Assembled GaN/AlN Quantum Dots. MRS Online Proceedings Library 798, 575–579 (2003). https://doi.org/10.1557/PROC-798-Y5.51

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