Spectroscopy of Intraband Electron Confinement in Self-Assembled GaN/AlN Quantum Dots

Abstract

We present a detailed analysis of inter- and intraband transitions in GaN/AlN self-organized quantum dots grown on sapphire, silicon (111) and 6H-SiC substrates. Quantum dot samples have been characterized by means of transmission electron microscopy, photoluminescence and photo-induced absorption spectroscopy. Interlevel transitions in the conduction band are observed in the 0.52–0.98 eV energy range, thus covering the telecommunication band. The s-pz absorption is peaked at 0.8 eV (0.52 eV) for samples with dot height of 1.5 nm (6 nm). Calculations show that in bigger dots the transition energy is governed by the value of the internal field.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    S. Nakamura and G. Fasol, “The blue laser diode”, (Springer, Berlin, 1997).

    Google Scholar 

  2. 2.

    C. Gmachl, H. M. Ng, N. -N. G. Chu, A. Y. Cho, Appl. Phys. Lett. 77, 3722 (2000).

    CAS  Article  Google Scholar 

  3. 3.

    K. Kishino, A. Kikuchi, H. Kanazawa, T. Tachibana, Appl. Phys. Lett. 81, 1234 (2002).

    CAS  Article  Google Scholar 

  4. 4.

    J. D. Heber, C. Gmachl, H. M. Ng, A. Y. Cho, Appl. Phys. Lett. 81, 1237 (2002).

    CAS  Article  Google Scholar 

  5. 5.

    N. Iizuka, K. Kaneko, N. Suzuki, Appl. Phys. Lett. 81, 1803 (2002).

    CAS  Article  Google Scholar 

  6. 6.

    D. Hofstetter, S.-S. Schad, H. Wu, W. J. Schaff, and L. F. Eastman, Appl. Phys. Lett. 83, 572 (2003).

    CAS  Article  Google Scholar 

  7. 7.

    B. Damilano, N. Grandjean, F. Semond, J. Massies, M. Leroux, Appl. Phys. Lett. 75, 962 (1999).

    CAS  Article  Google Scholar 

  8. 8.

    N. Gogneau, D. Jalabert, E. Monroy, T. Shibata, M. Tanaka, B. Daudin, J. Appl. Phys. 94, 2254 (2003).

    CAS  Article  Google Scholar 

  9. 9.

    Kh. Moumanis, A. Helman, F. Fossard, M. Tchernycheva, A. Lusson, F.H. Julien, B. Damilano, N. Grandjean, J. Massies, Appl. Phys. Lett. 82, 868 (2003).

    CAS  Article  Google Scholar 

  10. 10.

    A. Helman, F. Fossard, M. Tchernycheva, Kh. Moumanis, A. Lusson, F. Julien, B. Damilano, N. Grandjean, J. Massies, C. Adelmann, B. Daudin, D. Le Si Dang, Physica E 17, 60 (2003).

    CAS  Article  Google Scholar 

  11. 11.

    A. D. Andreev, E. P. O'Reilly, Phys. Rev. B 62, 15851, (2000)

    CAS  Article  Google Scholar 

  12. 12.

    V. Ranjan, G. Allan, C. Priester, C. Delerue, Phys. Rev. B 68, 115305, (2003).

    Article  Google Scholar 

  13. 13.

    F. Widmann, B. Daudin, G. Feuillet, Y. Samson, J. L. Rouvière, N. T. Pelekanos, J. Appl. Phys. 83, 7618 (1998).

    CAS  Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to Ana Helman.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Helman, A., Moumanis, K., Tchernycheva, M. et al. Spectroscopy of Intraband Electron Confinement in Self-Assembled GaN/AlN Quantum Dots. MRS Online Proceedings Library 798, 575–579 (2003). https://doi.org/10.1557/PROC-798-Y5.51

Download citation