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The microstructure of GaN nucleation layers grown by MOCVD on (1120) sapphire versus pressure and temperature

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Abstract

In this work, the evolution of morphology and defect structure in GaN nucleation layers on the a-plane of sapphire are investigated using TEM. The growth temperature and pressure were varied from 560 to 1100°C and from 20 to 600 torr, respectively. Whereas the highest growth temperature leads to a continuous layer, a 2D growth mode is not attained when the chamber pressure is varied from 20 to 600 torr at 1028°C. At the highest pressures (>300 t orr), a large distribution is obtained for the island sizes.

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Acknowledgments

T W and PR acknowledge the support of the EU under contract number HPRN-CT-2001-0 0297

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Author notes

  1. D.D. Koleske

    Present address: Sandia National Laboratories, Albuquerque, NM, 87185, USA

  2. A.E. Wickenden

    Present address: Army Research Laboratoy, Adelphi, MD, 20783, USA

Authors and Affiliations

  1. SIFCOM UMR 6176 CNRS, ENSICAEN, 6 Bd du Maréchal Juin, 14050, Caen Cedex, France

    T. Wojtowicz, P. Ruterana, M.E. Twigg, R.L. Henry, D.D. Koleske & A.E. Wickenden

  2. Electronics Science and Technology Division, NRL, Washington DC, 20375-5320, USA

    M.E. Twigg & R.L. Henry

Authors
  1. T. Wojtowicz
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  2. P. Ruterana
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  3. M.E. Twigg
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  4. R.L. Henry
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  5. D.D. Koleske
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  6. A.E. Wickenden
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Correspondence to P. Ruterana.

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Wojtowicz, T., Ruterana, P., Twigg, M. et al. The microstructure of GaN nucleation layers grown by MOCVD on (1120) sapphire versus pressure and temperature. MRS Online Proceedings Library 798, 508–511 (2003). https://doi.org/10.1557/PROC-798-Y5.32

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  • DOI: https://doi.org/10.1557/PROC-798-Y5.32

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