The microstructure of GaN nucleation layers grown by MOCVD on (1120) sapphire versus pressure and temperature

Abstract

In this work, the evolution of morphology and defect structure in GaN nucleation layers on the a-plane of sapphire are investigated using TEM. The growth temperature and pressure were varied from 560 to 1100°C and from 20 to 600 torr, respectively. Whereas the highest growth temperature leads to a continuous layer, a 2D growth mode is not attained when the chamber pressure is varied from 20 to 600 torr at 1028°C. At the highest pressures (>300 t orr), a large distribution is obtained for the island sizes.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    S. Nakamura, M. Senoh, and T. Mukai, Appl. Phys. Lett., 64, 1687(1994)

    CAS  Article  Google Scholar 

  2. 2.

    S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, Jpn. J. Appl. Phys. 35, L74 (1996)

    CAS  Article  Google Scholar 

  3. 3.

    S. N. Mohammad, A. Salvador, and H. Morkoç, Proc. IEEE 83, 1306 (1995)

    CAS  Article  Google Scholar 

  4. 4.

    P. Vennegues, B. Beaumont, and P. Gibart, J. Appl. Phys. 87, 4175 (2000)

    CAS  Article  Google Scholar 

  5. 5.

    T. S. Zheleva, W. M. Ashmawi, K. A. Jones, Phys. Stat. Sol. 176, 545 (1999)

    CAS  Article  Google Scholar 

  6. 6.

    D. D. Koleske, A. E. Wickenden, R. L. Henry, W. J. DeSisto, and R. J. Norman, J. Appl. Phys. 84, 1998 (1998)

    CAS  Article  Google Scholar 

  7. 7.

    A. E. Wickenden, D. D. Koleske, R. L. Henry, R. J. Norman, J. C. Culbertson, and M. E. Twigg, J. Electronic Mater. 28, 301(1999).

    CAS  Article  Google Scholar 

  8. 8.

    M. Fatemi, A. E. Wickenden, D. D. Koleske, M. E. Twigg, J. A. Henry Jr, R. L. Freitas, and R. J. Norman, Appl. Phys. Lett. 73, 608 (1998)

    CAS  Article  Google Scholar 

  9. 9.

    M. E. Twigg, D. D. Koleske, A. E. Wickenden, R. L. Henry, and S. C. Binari, Appl. Phys. Lett. 79, 4322 (2001)

    CAS  Article  Google Scholar 

  10. 10.

    K. Dovidenko, S. Oktyabrsky, J. Narajan, and M. Razeghi, J. Appl. Phys. 79, 2439 (1996)

    CAS  Article  Google Scholar 

  11. 11.

    M. E. Twigg, R. L. Henry, A. E. Wickenden, D. D. Koleske, M. Fatemi, and J. C. Culbertson, Inst. Phys. Conf. Ser. 164, 367 (1999).

    CAS  Google Scholar 

Download references

Acknowledgments

T W and PR acknowledge the support of the EU under contract number HPRN-CT-2001-0 0297

Author information

Affiliations

Authors

Corresponding author

Correspondence to P. Ruterana.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Wojtowicz, T., Ruterana, P., Twigg, M. et al. The microstructure of GaN nucleation layers grown by MOCVD on (1120) sapphire versus pressure and temperature. MRS Online Proceedings Library 798, 508–511 (2003). https://doi.org/10.1557/PROC-798-Y5.32

Download citation