Formation and dissociation of hydrogen-related defect centers in Mg-doped GaN

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Abstract

Moderately and heavily Mg-doped GaN were studied by a combination of post-growth annealing processes and electron beam irradiation techniques during cathodoluminescence (CL) to elucidate the chemical origin of the recombination centers responsible for the main optical emission lines. The shallow donor at 20–30 meV below the conduction band, which is involved in the donor-acceptor-pair (DAP) emission at 3.27 eV, was attributed to a hydrogen-related center, presumably a (VN-H) complex. Due to the small dissociation energy (<2 eV) of the (VN-H) complex, this emission line was strongly reduced by low-energy electron irradiation. CL investigations of the DAP at a similar energetic position in Si-doped (n-type) GaN indicated that this emission line is of different chemical origin than the 3.27 eV DAP in Mg-doped GaN. A slightly deeper DAP emission centered at 3.14 eV was observed following low-energy electron irradiation, indicating the appearance of an additional donor level with a binding energy of 100–200 meV, which was tentatively attributed to a VN-related center. The blue band (2.8–3.0 eV) in heavily Mg-doped GaN was found to consist of at least two different deep donor levels at 350±30 meV and 440±40 meV. The donor level at 350±30 meV was strongly affected by electron irradiation and attributed to a H-related defect.

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References

  1. 1.

    S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys. 31, 1258 (1992)

    CAS  Article  Google Scholar 

  2. 2.

    H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, Jpn. J. Appl. Phys. 28, L2112 (1989)

    CAS  Article  Google Scholar 

  3. 3.

    O. Gelhausen, M. R. Phillips and E. M. Goldys, Journal of Physics D 36, 2976 (2003)

    CAS  Article  Google Scholar 

  4. 4.

    U. Kaufmann, P. Schlotter, H. Obloh, K. Köhler, and M. Maier, Phys. Rev. B 62, 10867 (2000)

    CAS  Article  Google Scholar 

  5. 5.

    L. Eckey, U. von Gfug, J. Holst, A. Hoffmann, A. Kaschner, H. Siegle, C. Thomsen, B. Schineller, K. Heime, M. Heuken, O. Schön and R. Beccard, J. Appl. Phys. 84, 5828 (1998)

    CAS  Article  Google Scholar 

  6. 6.

    W. Götz, N. M. Johnson, J. Walker, D. P. Bour and R. A. Street, Appl. Phys. Lett. 68, 667 (1996)

    Article  Google Scholar 

  7. 7.

    A. Hoffmann, “Optical properties of GaN,” in “Advances in Solid State Physics (Festkörperprobleme XXXVI),” (editor {R. Helbig}), ch. 2, 33–56, Vieweg & Sohn, Wiesbaden (1997)

    Google Scholar 

  8. 8.

    I. Akasaki, H. Amano, M. Kito and K. Hiramatsu, J. of Luminescence 48 & 49, 666 (1991)

    Article  Google Scholar 

  9. 9.

    E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Moore Jr, W. L. Freitas, B. V. Shanabrook, R. L. Henry, A. E. Wickenden, D. D. Koleske, H. Obloh, P. Kozodoy, S. P. DenBaars and U. K. Mishra, Phys. Rev. B 65, 853121 (2002)

    Article  Google Scholar 

  10. 10.

    C. Wetzel, T. Suski, J.W. Weber III, E.R. Ager, E.E. Haller, S. Fischer, B.K. Meyer, R.J. Molnar, P. Perlin, Phys. Rev. Lett. 78, 3923 (1997)

    CAS  Article  Google Scholar 

  11. 11.

    W. Götz, N. M. Johnson, C. Chen, H. Liu, C. Kuo and W. Imler, Appl. Phys. Lett. 68, 3144 (1996)

    Article  Google Scholar 

  12. 12.

    F. Shahedipour and B. W. Wessels, Appl. Phys. Lett. 76, 3011 (2000)

    CAS  Article  Google Scholar 

  13. 13.

    C.G. van de Walle, Phys. Rev. B 56, 10020 (1997)

    Article  Google Scholar 

  14. 14.

    B. Monemar, P. P. Paskov, T. Paskova, J. P. Bergman, G. Pozina, W. M. Chen, P. N. Hai, I. A. Buyanova, H. Amano and I. Akasaki, Mat. Science and Engineering B93, 112 (2002)

    CAS  Article  Google Scholar 

  15. 15.

    A. Ionascut-Nedelcescu, C. Carlone, A. Houdayer, H. J. von Bardeleben, J.-L. Cantin and S. Raymond, IEEE Transactions on Nuclear Science 49, 2733 (2002)

    CAS  Article  Google Scholar 

  16. 16.

    J. Neugebauer and C. G. van de Walle, Phys. Rev. Lett. 75, 4452 (1995)

    CAS  Article  Google Scholar 

  17. 17.

    P. Hovington, D. Drouin, and R. Gauvin, Scanning 19, 1 (1997)

    CAS  Article  Google Scholar 

  18. 18.

    L. Eckey, J.-Ch. Holst, P. Maxim, R. Heitz, A. Hoffmann, I. Broser, B.K. Meyer, C. Wetzel, E. N. Mokhov P. G. Baranov, Appl. Phys. Lett. 68, 415 (1996)

    CAS  Article  Google Scholar 

  19. 19.

    O. Gelhausen, H. N. Klein, M. R. Phillips and E. M. Goldys, Appl. Phys. Lett. 83, 3293 (2003)

    CAS  Article  Google Scholar 

  20. 20.

    J. Neugebauer and C. G. van de Walle, Appl. Phys. Lett. 68, 1829 (1996)

    CAS  Article  Google Scholar 

  21. 21.

    D. C. Look, D. C. Reynolds, Z.-Q. Fang, J. W. Hemsky, J. R. Sizelove and R. L. Jones, Materials Science and Engineering B 66, 30 (1999)

    Article  Google Scholar 

  22. 22.

    M. Leroux, B. Beaumont, N. Grandjean, P. Lorenzini, S. Haffouz, P. Vennegues, J. Massies and P. Gilbart, Materials Science and Engineering B50, 97 (1997)

    CAS  Article  Google Scholar 

  23. 23.

    E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Moore Jr. W. L. Freitas, B. V. Shanabrook, R. L. Henry, A. E. Wickenden, D. D. Koleske, H. Obloh, P. Kozodoy, S. P. DenBaars and U. K. Mishra, Phys. Rev. B 65, 853121 (2002)

    Article  Google Scholar 

  24. 24.

    F. A. Reboredo and S. T. Pantelides, Phys. Rev. Lett. 82, 1887 (1999)

    CAS  Article  Google Scholar 

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Correspondence to O. Gelhausen.

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Gelhausen, O., Phillips, M.R., Goldys, E.M. et al. Formation and dissociation of hydrogen-related defect centers in Mg-doped GaN. MRS Online Proceedings Library 798, 472–477 (2003). https://doi.org/10.1557/PROC-798-Y5.20

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