Skip to main content
Log in

Influence of AIN Overgrowth on GaN Nanostructures Grown by Molecular Beam Epitaxy

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

The effects of AIN overgrowth on the structural properties of GaN nanostructures grown at 750°C by plasma-assisted molecular beam epitaxy have been investigated using Rutherford backscattering spectroscopy and transmission electron microscopy. The capping process induces a remarkable change in the dimension of the nanostructures. We demonstrate that the thickness/size reduction occurs at the first stage of AIN overgrowth and affects only the top GaN/AIN interface. This phenomenon is attributed to an exchange mechanism between Al atoms from the cap layer and Ga atoms in the nanostructures and depends on the strain state of the nanostructures.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. G. Mula, C. Adelmann, S. Moehl, J. Oullier, and B. Daudin, Phys. Rev. B 64, 195406 (2001).

    Article  Google Scholar 

  2. N. Gogneau, D. Jalabert, E. Monroy, T. Shibata, M. Tanaka, and B. Daudin, J. Appl. Phys. 94, 2254 (2003).

    Article  CAS  Google Scholar 

  3. P. B. Joyce, T. J. Krzyzewski, G. R. Bell, and T. S. Jones, Appl. Phys. Lett. 79, 3615 (2001).

    Article  CAS  Google Scholar 

  4. K. A. Mkhoyan, J. Silcox, H. Wu, W. J. Schaff, and L. F. Eastman, Appl. Phys. Lett. 83, 2668 (2003).

    Article  CAS  Google Scholar 

  5. A. Bourret, C. Adelmann, B. Daudin, J. L. Rouvière, G. Feuillet, and G. Mula, Phys. Rev. B 63, 245307 (2000).

    Article  Google Scholar 

  6. C. Adelmann, E. Sarigiannidou, D. Jalabert, Y. Hori, J. L. Rouvière, and B. Daudin, Appl. Phys. Lett. 82, 4154 (2003).

    Article  CAS  Google Scholar 

Download references

Acknowledgments

The authors acknowledge Y. Curé and M. Terrier for technical support.

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Gogneau, N., Monroy, E., Jalabert, D. et al. Influence of AIN Overgrowth on GaN Nanostructures Grown by Molecular Beam Epitaxy. MRS Online Proceedings Library 798, 412–417 (2003). https://doi.org/10.1557/PROC-798-Y4.4

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-798-Y4.4

Navigation