The effects of AIN overgrowth on the structural properties of GaN nanostructures grown at 750°C by plasma-assisted molecular beam epitaxy have been investigated using Rutherford backscattering spectroscopy and transmission electron microscopy. The capping process induces a remarkable change in the dimension of the nanostructures. We demonstrate that the thickness/size reduction occurs at the first stage of AIN overgrowth and affects only the top GaN/AIN interface. This phenomenon is attributed to an exchange mechanism between Al atoms from the cap layer and Ga atoms in the nanostructures and depends on the strain state of the nanostructures.
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The authors acknowledge Y. Curé and M. Terrier for technical support.
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Gogneau, N., Monroy, E., Jalabert, D. et al. Influence of AIN Overgrowth on GaN Nanostructures Grown by Molecular Beam Epitaxy. MRS Online Proceedings Library 798, 412–417 (2003). https://doi.org/10.1557/PROC-798-Y4.4