ZnO/AlGaN ultraviolet light emitting diodes.

Abstract

Ga doped n-type ZnO layers are grown using plasma assisted chemical vapor deposition on Mg doped p-type AlGaN epitaxial layers grown by hydride vapor phase epitaxy to form n-ZnO/p-AlGaN heterojunction light emitting diodes. I-V characteristics clearly show rectifying behavior with a threshold voltage of ~3.2 V and intense ultraviolet electroluminescence with peak emission at 390 nm. The dominant emission mechanism is found to result from hole injection from the p-type AlGaN into the n-type ZnO. Significant emission up to 500 K is observed indicating possible applications in harsh environments.

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Correspondence to D. M. Bagnall.

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Bagnall, D.M., Alivov, Y.I., Kalinina, E.V. et al. ZnO/AlGaN ultraviolet light emitting diodes.. MRS Online Proceedings Library 798, 395–400 (2003). https://doi.org/10.1557/PROC-798-Y3.9

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