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ZnO/AlGaN ultraviolet light emitting diodes.

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Abstract

Ga doped n-type ZnO layers are grown using plasma assisted chemical vapor deposition on Mg doped p-type AlGaN epitaxial layers grown by hydride vapor phase epitaxy to form n-ZnO/p-AlGaN heterojunction light emitting diodes. I-V characteristics clearly show rectifying behavior with a threshold voltage of ~3.2 V and intense ultraviolet electroluminescence with peak emission at 390 nm. The dominant emission mechanism is found to result from hole injection from the p-type AlGaN into the n-type ZnO. Significant emission up to 500 K is observed indicating possible applications in harsh environments.

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Authors and Affiliations

  1. Electronics and Computer Science, University of Southampton, UK

    D. M. Bagnall, Ya. I. Alivov, E. V. Kalinina, D. C. Look, B. M. Ataev, M. V. Chukichev, A. E. Cherenkov & A. K. Omaev

  2. Institute of Microelectronics Technology, RAS, Chernogolovka, Moscow dist., 142432, Russia

    Ya. I. Alivov

  3. A. F. Ioffe Physico-Technical Institute, RAS, St. Peterburg, Russia

    E. V. Kalinina & A. E. Cherenkov

  4. Semiconductor Research Center, Wright State University, Dayton, Ohio, 45435, USA

    D. C. Look

  5. Institute of Physics, Daghestan Scientific Centre of RAS, Makhachkala, 367003, Russia

    B. M. Ataev & A. K. Omaev

  6. Departmentof Physics, M. V. Lomonosov Moscow State University, Moscow, Russia

    M. V. Chukichev

Authors
  1. D. M. Bagnall
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  2. Ya. I. Alivov
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  3. E. V. Kalinina
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  4. D. C. Look
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  5. B. M. Ataev
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  6. M. V. Chukichev
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  7. A. E. Cherenkov
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  8. A. K. Omaev
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Bagnall, D.M., Alivov, Y.I., Kalinina, E.V. et al. ZnO/AlGaN ultraviolet light emitting diodes.. MRS Online Proceedings Library 798, 395–400 (2003). https://doi.org/10.1557/PROC-798-Y3.9

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  • DOI: https://doi.org/10.1557/PROC-798-Y3.9

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