Gate Leakage Suppression and Contact Engineering in Nitride Heterostructures

MRS Online Proceedings Library volume 798, pages249–254(2003)Cite this article

Abstract

We present a self-consistent approach to examine current flow in a general metal-polar heterostructure junction. The approach is applied to examine properties of two classes of junctions that are important in devices: (i) GaN/AlGaN/high-κ insulator structures for potential applications in very small gate devices to suppress gate tunneling current; (ii) GaN/AlGaN/LiNbO3 junctions for both n-type and p-type semiconductors with practical application for low source resistance regions. The physical parameters used for high-κ dielectrics and polarization charges reflect values typically found in ferroelectric materials. Our studies indicate that tailoring of junction properties is possible if polar oxides as thin as ~ 20Å can be achieved.

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References

  1. [1]

    U. K. Mishra, Y.-F. Wu, B. P. Keller, S. Keller, and S. P. Denbaars, IEEE Trans. Microwave Theory Tech. 46, 756 (1998).

    CAS  Article  Google Scholar 

  2. [2]

    R. Dimitrov, L. Wittmer, H. Felsl, A. Mitchell, O. Ambacher, and M. Stutzmann, Phys. Status Solidi A 168, R7 (1998).

    CAS  Article  Google Scholar 

  3. [3]

    F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 56, 10024 (1997).

    Article  Google Scholar 

  4. [4]

    O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murohy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, J. Appl. Phys. 85, 3222 (1999).

    CAS  Article  Google Scholar 

  5. [5]

    N. Maeda, T. Saitoh, K. Tsubaki, T. Nishida, and N. Kobayashi, Appl. Phys. Lett. 76, 3118 (2000).

    CAS  Article  Google Scholar 

  6. [6]

    M. Singh, J. Singh, and U. Mishra, J. Appl. Phys. 91, 2989 (2002).

    CAS  Article  Google Scholar 

  7. [7]

    M. Singh and J. Singh, J. Appl. Phys. 94, 2498 (2003).

    CAS  Article  Google Scholar 

  8. [8]

    H. K. Gummel, IEEE Trans. Electron Devices ED11, 455 (1964).

    Article  Google Scholar 

  9. [9]

    K. Yang, J. R. East, and G. I. Haddad, Solid-State Electron. 36, 321 (1993).

    CAS  Article  Google Scholar 

  10. [10]

    Y. Zhang and J. Singh, J. Appl. Phys. 85, 587 (1999).

    CAS  Article  Google Scholar 

  11. [11]

    M. Singh, Y. Zhang, J. Singh, and U. Mishra, Appl. Phys. Lett. 77, 1867 (2000).

    CAS  Article  Google Scholar 

  12. [12]

    Y.-R. Wu, M. Singh, and J. Singh, J. Appl. Phys. 94, 5826 (2003).

    CAS  Article  Google Scholar 

  13. [13]

    R. Droopad, Z. Yu, J. Ramdani, L. Hilt, J. Curless, C. Overgaard, J.L.E. Jr., J. Finder, K. Eisenbeiser, J. Wang, V. Kaushik, B.-Y. Ngyuen, and B. Ooms, J. Cryst. Growth 227–228, 936 (2001).

    Article  Google Scholar 

  14. [14]

    P. Kozodoy, H. Xing, S. P. DenBaars, U. K. Mishra, A. Saxler, R. Perrin, S. Elhamri, and W. C. Mitchel, J. Appl. Phys. 87, 1832 (2000).

    CAS  Article  Google Scholar 

  15. [15]

    S. B. Zhang, S.-H. Wei, and A. Zunger, Phys. Rev. Lett. 84, 1232 (2000).

    CAS  Article  Google Scholar 

  16. [16]

    W. Walukiewicz, Physica B: Condensed Matter 302–303, 123 (2001).

    Article  Google Scholar 

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Affiliations

  1. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, 48109, USA

    Yuh-Renn Wu, Madhusudan Singh & Jasprit Singh

Authors
  1. Yuh-Renn Wu
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  2. Madhusudan Singh
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  3. Jasprit Singh
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Correspondence to Yuh-Renn Wu.

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Wu, YR., Singh, M. & Singh, J. Gate Leakage Suppression and Contact Engineering in Nitride Heterostructures. MRS Online Proceedings Library 798, 249–254 (2003). https://doi.org/10.1557/PROC-798-Y11.1

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