Structural Characterization of Low-Temperature InN Buffer Layer Grown by RF-MBE

Abstract

The microstructure of an InN buffer layer grown on (0001) sapphire at low temperature by radio-frequency molecular beam epitaxy (RF-MBE) is characterized by transmission electron microscopy. The low-temperature InN buffer layer is found to contain local inhomogeneous regions of island-like grains surrounded by misoriented InN grains and inclusions of cubic phase. The generation of such anti-phase InN nuclei near the island-like grains is expected to give rise to defects at the interface. It is considered that these anti-phase InN nuclei are formed by local fluctuations of stoichiometry due to inadequate surface migration during the growth of the InN buffer layer, indicating the important of controlling the surface stoichiometry during InN growth.

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Acknowledgments

This work was supported by a Grant-in-Aid for Scientific Research (B) #13450131 from the Ministry of Education, Culture, Sports, Science and Technology of Japan, the Academic Frontier Promotion Project, and The 21st Century COE Program. The authors would like to thank F. A. Ponce and R. Liu for valuable comments and discussion.

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Correspondence to T. Araki.

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Araki, T., Nanishi, Y. Structural Characterization of Low-Temperature InN Buffer Layer Grown by RF-MBE. MRS Online Proceedings Library 798, 227–232 (2003). https://doi.org/10.1557/PROC-798-Y10.68

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