One of the principle problems of high power electronic devices is the extraction of heat from the active region of the device1. The thermal conductivity of the substrate is a crucial parameter affecting the thermal dissipation capability of a device. In this study we investigated the thermal conductivity at room temperature of five GaN samples grown on silicon, employing the 3 omega thermal conductivity method. The thickness of the GaN layers varied from 0 to 700 nm. The effective thermal conductivity for the GaN layers was found to range from 130 to 140 W/m K which is comparable to thermal conductivity of the silicon substrate. This result indicates that the heat transfer of GaN on silicon is as good as either GaN or silicon alone, and that no substantial thermal degradation attributable to the GaN/Silicon interface is observed.
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S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, Journal of Applied Physics 86, 1–78 (1999).
P. R. W. Touloukian Y.S., Ho C.Y., Klemens P. G., The TPRC Data Series 1, 2 (1970).
F. A. Kim J. H., Novotny D., J. Appl. Phys. 86, 3959 (1999).
D. G. Cahill, Review of Scientific Instruments 61, 802–808 (1990).
J. H. Kim, A. Feldman, and D. Novotny, Journal of Applied Physics 86, 3959–3963 (1999).
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Mion, C., Chang, Y.C., Muth, J.F. et al. Thermal Conductivity of GaN Grown on Silicon Substrates. MRS Online Proceedings Library 798, 113–118 (2003). https://doi.org/10.1557/PROC-798-Y10.35