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Growth of InGaN Nanorods as the Blue Light Source for White Light Emitting Devices

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Abstract

This work demonstrates the properties of InGaN nanorod arrays with various In mole fractions by modified HVPE using In metal at the low growth temperature. The nanorods grown on (0001) sapphire substrates are preferentially oriented in the c-axis direction. We found that the In mole fractions in the nanorods were linearly increased at x ≤ 0.1. However, In mole fractions were slightly increased at x > 0.1 and then were gradually saturated at x = 0.2. CL spectra show strong blue emissions from 428 nm (x = 0.1, 2.89 eV) to 470 nm (x = 0.2, 2.64 eV) at room temperature. From this result, we found the fact that increasing In mole fraction in the InGaN nanorod shift the peak position of CL spectrum emitted from InGaN nanorod to the low energy region.

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Acknowledgments

This work was supported by KOSEF through the QSRC at Dongguk University.

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Authors and Affiliations

  1. Quantum-functional Semiconductor Research Center, Dongguk University, Seoul, 100-715, Korea

    Hwa-Mok Kim & Tae Won Kang

  2. School of Electronics and Information, College of Electronics and Information, Kyunghee University, Yongin, 449-701, Korea

    Kwan Soo Chung

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  1. Hwa-Mok Kim
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  2. Tae Won Kang
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  3. Kwan Soo Chung
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Kim, HM., Kang, T.W. & Chung, K.S. Growth of InGaN Nanorods as the Blue Light Source for White Light Emitting Devices. MRS Online Proceedings Library 789, 173–180 (2003). https://doi.org/10.1557/PROC-789-N15.35

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  • DOI: https://doi.org/10.1557/PROC-789-N15.35

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