The Effect of Doping on the Energy Distribution of Localized States and Carrier Transport in Disordered Organic Semiconductors

MRS Online Proceedings Library volume 771, Article number: 57 (2003) Cite this article

Abstract

Doping of a disordered organic semiconductor gives rise to additional energy disorder due to the Coulomb interaction between randomly distributed dopant ions and carriers localized in intrinsic hopping sites. Although the carrier density increases with increasing doping level the additional energy disorder can significantly reduce the carrier hopping mobility. At higher doping levels the filling of deep states takes over, which leads to steeply increasing mobility at high dopant concentrations.

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Author information

Affiliations

  1. IMEC, Kapeldreef 75, B-3001, Heverlee-Leuven, Belgium

    Vladimir I Arkhipov & Paul Heremans

  2. Darmstadt University of Technology, Institute of Material Science, Petersenstrasse 23, D-64281, Darmstadt, Germany

    Vladimir I Arkhipov

  3. Semiconductor Physics Laboratory, University of Leuven, Celestijnenlaan 200D, B-3001, Heverlee-Leuven, Belgium

    Evgenia V. Emelianova & Guy J. Adriaenssens

  4. Institute of Physical, Nuclear and Macromolecular Chemistry, Philipps University of Marburg, Hans-Meerwein-Strasse, D-35032, Marburg, Germany

    Heinz Bässler

Authors
  1. Vladimir I Arkhipov
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  2. Paul Heremans
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  3. Evgenia V. Emelianova
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  4. Guy J. Adriaenssens
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  5. Heinz Bässler
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Correspondence to Vladimir I Arkhipov.

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Arkhipov, V.I., Heremans, P., Emelianova, E.V. et al. The Effect of Doping on the Energy Distribution of Localized States and Carrier Transport in Disordered Organic Semiconductors. MRS Online Proceedings Library 771, 57 (2003). https://doi.org/10.1557/PROC-771-L5.7

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