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Effect of thermal cycling on performance of Poly(3-hexylthiophene) Transistors

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Abstract

We present the results of studies on the electrical and physical modifications to Poly(3-hexylthiophene), upon thermal annealing. Thermally-induced performance modifications and thermal stability of polythiophene thin film transistors are explored. We observe substantial mobility improvements in devices annealed at low temperatures (>80°C), as well as increases in on/off ratios by two orders of magnitude at moderate anneal temperatures (~120°C). We document changes in conductivity, mobility, on current, and on/off ratio with anneal temperature and total thermal budget. In conjunction with material analysis, we develop qualitative models for the mechanisms involved in the annealing/degradation processes. Hence, this study provides a comprehensive analysis of the effect of thermal cycling of polythiophene TFTs on various device performance metrics, and identifies the relevant thermal limits and failure mechanisms.

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Authors and Affiliations

  1. Department of Electrical Engineering and Computer Sciences, University of California, 94720, Berkeley Berkeley, CA, U.S.A.

    Brian A. Mattis, Paul C. Chang & Vivek Subramanian

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  1. Brian A. Mattis
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  2. Paul C. Chang
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  3. Vivek Subramanian
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Mattis, B.A., Chang, P.C. & Subramanian, V. Effect of thermal cycling on performance of Poly(3-hexylthiophene) Transistors. MRS Online Proceedings Library 771, 1035 (2003). https://doi.org/10.1557/PROC-771-L10.35

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  • DOI: https://doi.org/10.1557/PROC-771-L10.35

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