Effect of thermal cycling on performance of Poly(3-hexylthiophene) Transistors

Abstract

We present the results of studies on the electrical and physical modifications to Poly(3-hexylthiophene), upon thermal annealing. Thermally-induced performance modifications and thermal stability of polythiophene thin film transistors are explored. We observe substantial mobility improvements in devices annealed at low temperatures (>80°C), as well as increases in on/off ratios by two orders of magnitude at moderate anneal temperatures (~120°C). We document changes in conductivity, mobility, on current, and on/off ratio with anneal temperature and total thermal budget. In conjunction with material analysis, we develop qualitative models for the mechanisms involved in the annealing/degradation processes. Hence, this study provides a comprehensive analysis of the effect of thermal cycling of polythiophene TFTs on various device performance metrics, and identifies the relevant thermal limits and failure mechanisms.

This is a preview of subscription content, access via your institution.

References

  1. ]1]

    ]1] H. Sirringhaus, N. Tessler, and R. H. Friend, Science 280, 1741 (1998)

    CAS  Article  Google Scholar 

  2. ]2]

    ]2] C. Vaterlein, B. Ziegler, W. Gebauer, H. Neureiter, M. Stoldt, M. Weaver, Synthetic Metals 76, 133 (1996)

    Article  Google Scholar 

  3. ]3]

    ]3] A. Brown, C. Jarrett, D. Leeuw and M. Matters, Synthetic Metals 88, 37 (1997)

    CAS  Article  Google Scholar 

  4. ]4]

    ]4] Y. Liu, K. Oshima, T. Yamauchi, M. Shimomura and S. Miyauchi, Synthetic Metals 101, 451 (1999)

    CAS  Article  Google Scholar 

  5. ]5]

    ]5] K. Yoshino, D. Park, B. Park, M. Onoda and R. Sugimoto, Solid State Comm. 67, 1119 (1988)

    CAS  Article  Google Scholar 

  6. ]6]

    ]6] S. Hotta and K. Ito “Electronic Properties of Polythiophenes.” Denis Fichou, Handbook of Oligo- and Polythiophenes, ed. D. Fichou (Wiley-vch, 1999) pp. 45–82

  7. ]7]

    ]7] G. Kilic, L. Toppare and E. Yurtsever . Synthetic Metals 79, 19 (1996)

    Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to Brian A. Mattis.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Mattis, B.A., Chang, P.C. & Subramanian, V. Effect of thermal cycling on performance of Poly(3-hexylthiophene) Transistors. MRS Online Proceedings Library 771, 1035 (2003). https://doi.org/10.1557/PROC-771-L10.35

Download citation