Low Resistivity Nickel Germanosilicide Contacts to Ultra-shallow Junctions Formed by the Selective Si1-x Gex Technology for Nanoscale CMOS

Abstract

In this paper, we present our recent results on nickel germanosilicide contacts formed on p+-n and n+-p junctions formed by selective deposition of in-situ doped Si1-xGex alloys. Our results show that ultra-thin, low resistivity NiSi1-xGex contacts can be formed at temperatures as low as 300°C on both boron and phosphorus doped Si1-xGex layers. Ultra-shallow junctions with excellent reverse leakage behavior and a contact resistivity ∼ of 10-8 ohm-cm2 were successfully demonstrated. The thermal stability of NiSi1-xGex was found to be limited to 500°C on p+-Si1-xGex and 600°C onn+-Si1-xGex. It was found that by inserting a thin Pt interlayer between Ni and Si1-xGex, the quality of the NiSi1-xGex contacts could be significantly improved. The Pt interlayer was found to improve the interface morphology, which was found to have a direct impact on the electrical properties of the contacts.

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References

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Correspondence to Jing Liu.

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Liu, J., Mo, H. & Öztürk, M.C. Low Resistivity Nickel Germanosilicide Contacts to Ultra-shallow Junctions Formed by the Selective Si1-x Gex Technology for Nanoscale CMOS. MRS Online Proceedings Library 765, 77 (2002). https://doi.org/10.1557/PROC-765-D7.7

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