Carrier distributions associated with point charges in silicon solved with quantum perturbation theory are used to determine Coulombic interactions between charged defects in the presence of carrier screening. The resulting interactions are used in kinetic lattice Monte Carlo (KLMC) simulations of point defect-mediated diffusion to study dopant redistribution and associated variations in carrier concentration. Over a broad range of doping concentrations and temperatures, Coulombic repulsion between like dopants leads to ordering, resulting in a more uniform electrical potential distribution and therefore reduced variations in device performance compared with random doping, the standard condition assumed in previous doping fluctuation analyses.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
B. Hoeneisen and C. A. Mead, Solid-State Electron. 15, 819 (1972).
R. W. Keyes, Proc. IEEE 63, 740 (1975).
T. Mizuno, J. Okamura, and A. Toriumi, IEEE Trans. Electron Dev. 41, 2216 (1994).
A. Asenov, G. Slavcheva, A. R. Brown, J. H. Davies, and S. Saini, IEEE Trans. Electron Dev. 48, 722 (2001).
N. Sano and M. Tomizawa, Appl. Phys. Lett. 79, 2267 (2001).
I. D. Mayergoyz and P. Andrei, J. Appl. Phys. 90, 3019 (2001).
Y. Yasuda, M. Takamiya, and T. Hiramoto, IEEE Trans. Electron Dev. 47, 1838 (2000).
X. Tang, V. K. De, and J. D. Meindl, IEEE Trans. VLSI Systems 5, 369 (1997).
S. T. Dunham and C. D. Wu, J. Appl. Phys. 78, 2362 (1995).
M. M. Bunea and S. T. Dunham, in Semiconductor Process and Device Performance Modeling, MRS Proc. 490, edited by S. T. Dunham and J. Nelson (Pittsburgh, 1998), p. 3–8.
Z. Qin and S. T. Dunham, MRS Proc. 717, C3.8 (2002).
International Technology Roadmap for Semiconductors (ITRS): Executive Summary (2001), p. 38, Table 1f.
About this article
Cite this article
Qin, Z., Dunham, S.T. Atomistic Simulations of Effect of Coulombic Interactions on Carrier Fluctuations in Doped Silicon. MRS Online Proceedings Library 765, 57 (2002). https://doi.org/10.1557/PROC-765-D5.7