Hafnium oxide (HfO2) thin films were synthesized from tetrakis(dimethylamino) hafnium (TDMAH) and ozone (O3) by atomic layer deposition (ALD) on 200 mm silicon wafers. Gradual saturation was observed for TDMAH exposure pulse. However O3 showed better saturation behavior for O3exposure. Yet, 100% step coverage was achieved for ~100nm trenches with aspect ratio of 35. Temperature dependence of the deposition rate was studied at susceptor temperature from 160°C to 420°C. The lowest deposition rate was observed at 320°C. Mercury probe measurements indicated the dielectric constant increased from 16 to 20 as susceptor temperature increased from 200°C to 320°C. Selected comparisons with tetrakis (ethylmethylamino) hafnium (TEMAH) were also made.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
M. Gutsche, H. Seidl, J. Luetzen, A. Birner, T. Hecht, S. Jakschik, M. Kerber, M. Leonhardt, P. Moll, T. Pompl, H, Reisinger, S. Rongen, A. Saenger, U. Schroeder, B. Sell, A. Wahl and D. Schumann, Technical Digest International Electron Device Meeting, 18.6.6 (IEEE, Piscataway, NJ 2001).
Dennis M. Hausmann, Esther Kim, Jill Becker, and Roy G. Gordon, the Chemistry of Materials, Vol. 14, No. 10, 4350–4358 (2002)
Kaupo Kukli, Mikko Ritala, Timo Sajavaara, Juhani Keinonen, Markku Leskela, Chemical Vapor Deposition, Vol. 8, No. 5, 199–204 (2002)
J.H. Lee, et al., “Mass Production Worthy HfO2-Al2O3 Laminates Capacitor Technology using Hf Liquid Precursor for sub-100 nm DRAMS”, Techincal Digest, International Electron Devices Meeting, 9.1 (IEEE, Piscataway, New Jersey 2002)
H. Molsa and L. Niinisto, Mat. Res. Soc. Symp. Proc., Vol 335, 341 (1994)
Xinye Liu, et al., “ALD of HfO2 Films from Tetrakis(ethylmethylamino)Hafnium (TEMAH) with Ozone andWater”, ALD 2002 Conference, August 19–21, 2002, at Hanyang University in Seoul, Korea
Xinye Liu, et al., “Atomic Layer Deposition of Hafnium Oxide from Tetrakis(ethylmethylamino)hafnium and Ozone”, to be submitted to the Journal of the Electrochemical Society.
About this article
Cite this article
Liu, X., Ramanathan, S. & Seidel, T.E. Atomic Layer Deposition of Hafnium Oxide Thin Films from Tetrakis(dimethylamino)Hafnium (TDMAH) and Ozone. MRS Online Proceedings Library 765, 38 (2002). https://doi.org/10.1557/PROC-765-D3.8