Low temperature Si0.85 Ge0.15 oxynitridation in wet-nitric oxide ambient

Abstract

Nitric oxide (NO) aided Si0.85Ge0.15 wet-oxynitridation has been performed at 400 700°C, while the wet-NO feed gas was preheated to higher temperatures before entering the reaction zone. X-Ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) data suggests that both nitrogen and oxygen incorporation increases within the dielectric bulk with increasing wet-oxynitridation temperature, while there is no apparent germanium segregation towards the dielectric/substrate interface at all temperatures studied. Angle-resolved XPS analysis shows that increase in wetoxynitridation temperature above 600°C is likely to volatilize some germanium oxide from the surface region. Nitrogen incorporation is found to hinder germanium segregation. These results are discussed in the context of an overall mechanism of SiGe wet-oxynitridation.

This is a preview of subscription content, access via your institution.

References

  1. 1

    J. M. Madsen, Z. Cui and C. G. Takoudis, J. Appl. Phys. 87(2000), 2046

    CAS  Article  Google Scholar 

  2. 2

    U. König and J. Hersener, Solid State Phenom. 4748(1996), 17

    Article  Google Scholar 

  3. 3

    D. Nayak, K. Kamjoo, J. S. Park, J. C. C. Woo and K. L. Wang, IEEE Trans. Electron Devices 39 (1992), 56

    CAS  Article  Google Scholar 

  4. 4

    D. Nayak, K. Kamjoo, J. S. Park, J. C. C. Woo and K. L. Wang, Appl. Phys. Lett. 66 (1998), 56

    Google Scholar 

  5. 5

    F.K. LeGoues, R. Rosenberg and B.S. Meyerson Appl. Phys. Lett. 54 (1989), 644

    CAS  Article  Google Scholar 

  6. 6

    O.W. Holland, C.W. White and D. Fathy Appl. Phys. Lett. 51(1987), 520

    CAS  Article  Google Scholar 

  7. 7

    D. Fathy, O.W. Holland and C.W. White Appl. Phys. Lett. 51(1987), 1337

    CAS  Article  Google Scholar 

  8. 8

    G. L. Patton, S.S. Iyer, S.L. Delage, E. Ganin and R.C. McIntosh In: Mater Res. Soc. Symp. Proc. 102 (1988), 295

    CAS  Article  Google Scholar 

  9. 9

    F.K. LeGoues, R. Rosenberg, T. Nguyen, F. Himpsel and B.S. Meyerson J. Appl. Phys. 65 (1989), 1724

    CAS  Article  Google Scholar 

  10. 10

    D.K. Nayak, K. Kamijoo, J.S. Park, J.C.S. Woo and K.L. Wang Appl. Phys. Lett. 57 (1990), 369

    CAS  Article  Google Scholar 

  11. 11

    J. Eugene, F.K. LeGoues, V.P. Kesan, S.S. Lyer and F.M. d’Heurle Appl. Phys. Lett. 59 (1991), 78

    CAS  Article  Google Scholar 

  12. 12

    D. Nayak, K. Kamijoo, J.C.S. Woo, J.S. Park and K.L. Wang Appl. Phys. Lett. 56 (1990), 66

    CAS  Article  Google Scholar 

  13. 13

    H. K. Liou, P. Mei, U. Gennser and E.S. Yang Appl. Phys. Lett. 59 (1991), 1200

    CAS  Article  Google Scholar 

  14. 14

    S. S. Dang and C. G. Takoudis, J. Appl. Phys. 86 (1999), 1326

    CAS  Article  Google Scholar 

  15. 15

    A.Dasgupta and C.G. Takoudis, J. Appl Phys., July (2003) (in press)

  16. 16

    R. Goswami, J. B. Butcher, R. Ginige, J. F. Zhang, S. Taylor, and W. Eccleston, Electron Lett. 24 (1988), 1269

    Article  Google Scholar 

  17. 17

    G. P. Kennedy, S. Taylor, W. Eccleston, W. M. Arnoldbik, and F. H. P. M. Habracken, Microelectron Eng. 28 (1995), 141

    CAS  Article  Google Scholar 

  18. 18

    K. Prabhakaran and T. Ogino, Surface Science, L1068 (1997),

  19. 19

    L. S. Riley, S. Hall, J. Appl. Phys. 85, 6828 (1999)

    CAS  Article  Google Scholar 

  20. 20

    G. –M. Rignanese, A. Pasquarello, Phy. Rev (B) 63, 075307 (2001)

    Article  Google Scholar 

  21. 21

    Z. Fan, G. Zao, P. K. Chu, Z. Jin, H. S. Kwok and M. Wong, Appl. Phys. Lett. 73 (1998), 360

    CAS  Article  Google Scholar 

  22. 22

    K. Prabhakaran, F. Maeda, Y. Watanabe, T. Ogino, Appl. Phys. Lett. 76 (2000), 2244

    CAS  Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to Anindya Dasgupta.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Dasgupta, A., Takoudis, C.G. Low temperature Si0.85 Ge0.15 oxynitridation in wet-nitric oxide ambient. MRS Online Proceedings Library 765, 326 (2002). https://doi.org/10.1557/PROC-765-D3.26

Download citation