Stimulated Emission at 258 nm in AlN/AlGaN Quantum Wells Grown on Bulk AlN Substrates


We report on observation of stimulated emission at 258 nm in AlN/AlGaN multiple quantum wells. The structures were grown over Al-face single crystal bulk AlN substrates. AlN/AlGaN structures with 50% of Al in the well material were grown using low-pressure metalorganic chemical vapour deposition. Characterization by using X-ray, AFM, SEM, and photoluminescence techniques indicated high structural quality of the structures. The stimulated emission was measured using the variable stripe length method under excitation by 4-ns-long pulses of the fifth harmonic of Nd:YAG laser radiation at 213 nm (5.82 eV). The stimulated emission exhibited a characteristic superlinear dependence of emission intensity on the pump intensity as well as an exponential increase of the sample-edge emission intensity with increasing stripe length up to ∼430 μm and the intensity saturation beyond this range. The observation of stimulated emission at 258 nm is very promising for the future development of III-nitride-based deep-UV laser diodes on bulk AlN substrates.

This is a preview of subscription content, access via your institution.


  1. 1.

    L. Liu, J. H. Edgar, Materials Science and Engineering R37, 61 (2002).

    CAS  Article  Google Scholar 

  2. 2.

    V. Adivarahan, S. Wu, A. Chitnis, R. Pachipulusu, V. Mandavili, M. Shatalov, J. P. Zhang, M. A. Khan, G. Tamulaitis, A. Sereika, I. Yilmaz, M. S. Shur, and R. Gaska, Appl. Phys. Lett. 81, 3666 (2002).

    CAS  Article  Google Scholar 

  3. 3.

    M. Shatalov, A. Chitnis, V. Mandavili, R. Pachipulusu, J. P. Zhang, V. Adivarahan, S. Wu, G. Simin, M. AsifKhan, G. Tamulaitis, A. Sereika, I. Yilmaz, M. S. Shur, R. Gaska, Appl. Phys. Lett. 82, 167 (2003).

    CAS  Article  Google Scholar 

  4. 4.

    G. A. Slack, J. Phys Chem. Solids 34, 321 (1973).

    CAS  Article  Google Scholar 

  5. 5.

    G. A. Slack and T. McNelly, J. Cryst. Growth 34, 263 (1976); 42, 560 (1977).

    CAS  Article  Google Scholar 

  6. 6.

    J. C. Rojo, G. A. Slack, K. Morgan, B. Raghothamachar, M. Dudley, and L. J. Schowalter, J. Cryst. Growth 231, 317 (2001).

    Article  Google Scholar 

  7. 7.

    L. J. Schowalter, Y. Shusterman, R. Wang, I. Bhat, G. Arunmozhi, and G. A. Slack, Appl. Phys. Lett. 76, 985 (2000); J.C. Rojo, L.J. Schowalter, R. Gaska, M. Shur, M.A Khan, J. Yang, D.D. Koleske, J. Crystal Growth 240, 508 (2002)

    CAS  Article  Google Scholar 

  8. 8.

    M. Asif Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, H.-C. zur Loye, G. Tamulaitis, A. Zukauskas, D. J. Smith, D. Chandrasekhar, and R. Bicknell-Tassius, Appl. Phys. Lett. 76, 1161 (2000).

    CAS  Article  Google Scholar 

  9. 9.

    J. Li, K. B. Nam, K. H. Kim, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 78, 61 (2001).

    CAS  Article  Google Scholar 

  10. 10.

    M.E. Aumer, S.F. LeBoeuf, B.F. Moody, and S.M. Bedair, Appl. Phys.Lett. 79, 3803 (2001).

    CAS  Article  Google Scholar 

  11. 11.

    J. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. Yang, G. Simin, M. Asif Khan, R. Gaska, and M. Shur, Appl. Phys. Lett. 79, 925 (2001).

    CAS  Article  Google Scholar 

  12. 12.

    J. P. Zhang, H.M. Wang, M.E. Gaevski, C. Q. Chen, Q. Fareed, J. W. Yang, G. Simin, and M. Asif Khan, Appl. Phys. Lett. 80, 3542 (2002).

    CAS  Article  Google Scholar 

  13. 13.

    R. Gaska, C. Chen, J. Yang, E. Kuokstis, A. Khan, G. Tamulaitis, I. Yilmaz, M. S. Shur, J. C. Rojo, L. J. Schowalter, Appl. Phys. Lett. 81, 4658 (2002).

    CAS  Article  Google Scholar 

  14. 14.

    M. Vehse, P. Michler, O. Lange, M. Rowe, J. Gutowski, S. Bader, H. J. Lugauer, G. Bruderl, A. Weimar, A. Lell, and V. Harle, Appl. Phys. Lett. 79, 1763 (2001).

    CAS  Article  Google Scholar 

Download references

Author information



Corresponding author

Correspondence to R. Gaska.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Gaska, R., Fareed, Q., Tamulaitis, G. et al. Stimulated Emission at 258 nm in AlN/AlGaN Quantum Wells Grown on Bulk AlN Substrates. MRS Online Proceedings Library 764, 69 (2002).

Download citation