Electron Injection-Induced Effects in GaN: Physics and Applications

MRS Online Proceedings Library volume 764, Article number: 54 (2002) Cite this article

Abstract

Electron injection into p-type GaN and related compounds leads to a pronounced increase in the minority carrier lifetime. This increase is manifested in a multiple-fold elongation of the minority carrier diffusion length as is evident from the Electron Beam Induced Current (EBIC) measurements in-situ in a Scanning Electron Microscope. Minority carrier transport enhancement as a result of electron injection is consistent with the changes observed in the material’s luminescent properties. Based on the activation energy for the electron injection-induced effects, we ascribe this phenomenon to charging of Mg-acceptor related levels. In addition, we demonstrate an impact of electron injection on responsivity of GaN p-i-n photodetectors.

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  1. Department of Physics, University of Central Florida, 32816-2385, Orlando, FL, U.S.A.

    Leonid Chernyak & William Burdett

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  1. Leonid Chernyak
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  2. William Burdett
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Correspondence to Leonid Chernyak.

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Chernyak, L., Burdett, W. Electron Injection-Induced Effects in GaN: Physics and Applications. MRS Online Proceedings Library 764, 54 (2002). https://doi.org/10.1557/PROC-764-C5.4

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