Electron Injection-Induced Effects in GaN: Physics and Applications

Abstract

Electron injection into p-type GaN and related compounds leads to a pronounced increase in the minority carrier lifetime. This increase is manifested in a multiple-fold elongation of the minority carrier diffusion length as is evident from the Electron Beam Induced Current (EBIC) measurements in-situ in a Scanning Electron Microscope. Minority carrier transport enhancement as a result of electron injection is consistent with the changes observed in the material’s luminescent properties. Based on the activation energy for the electron injection-induced effects, we ascribe this phenomenon to charging of Mg-acceptor related levels. In addition, we demonstrate an impact of electron injection on responsivity of GaN p-i-n photodetectors.

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References

  1. 1.

    L. Chernyak, A. Osinsky, V. Fuflyigin, E.F. Schubert, Appl. Phys. Lett. 77, 875 (2000).

    CAS  Article  Google Scholar 

  2. 2.

    L. Chernyak, A. Osinsky, A. Schulte, Solid State Electron. 45, 1687 (2001).

    CAS  Article  Google Scholar 

  3. 3.

    L. Chernyak, G. Nootz, A. Osinsky, Electron. Lett. 37, 922 (2001).

    Article  Google Scholar 

  4. 4.

    L. Chernyak, A. Schulte, A. Osinsky, J. Graff, E.F. Schubert, Appl. Phys. Lett. 80, 926 (2002).

    CAS  Article  Google Scholar 

  5. 5.

    L. Chernyak, A. Osinsky, H. Temkin, J.W. Yang, Q. Chen, M.A. Khan, Appl. Phys. Lett. 69, 2531 (1996).

    CAS  Article  Google Scholar 

  6. 6.

    M. Eckstein, A. Jakubowicz, M. Bode, H.-U. Habermeier, Proc. SPIE 1284, 228 (1990).

    CAS  Article  Google Scholar 

  7. 7.

    A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Osinsky, P.E. Norris, S.J. Pearton, J. Van Hove, A.M. Wowchack, P.P. Chow, J. Appl. Phys. 90, 4032 (2001).

    CAS  Article  Google Scholar 

  8. 8.

    W. Gotz, R.S. Kern, C.H. Chen, H. Liu, D.A. Steigerwald, R.M. Fletcher, Mat. Sci. Eng. B59, 211 (1999).

    CAS  Article  Google Scholar 

  9. 9.

    J.Z. Li, J.Y. Lin, H.X. Jiang, A. Salvador, A. Botchkarev, H. Morkoc, Appl. Phys. Lett. 69, 1474 (1996).

    CAS  Article  Google Scholar 

  10. 10.

    O. Gelhausen, H.N. Klein, M.R. Phillips, E.M. Goldys, Appl. Phys. Lett. 81, 3747 (2002).

    CAS  Article  Google Scholar 

  11. 11.

    J.I. Pankove, Optical Processes in Semiconductors (Prentice-Hall, Englewood Cliffs, New Jersey, 1971).

  12. 12.

    S.M. Sze, Semiconductor Devices Physics and Technology (Wiley & Sons, New York, 1985) pp. 49–50.

    Google Scholar 

  13. 13.

    C. Johnson, J.Y. Lin, H.X. Jiang, M.A. Khan, C.J. Sun, Appl. Phys. Lett. 68, 1808 (1996).

    CAS  Article  Google Scholar 

  14. 14.

    A.K. Rice, K.J. Malloy, J. Appl. Phys. 89, 2816 (2001).

    CAS  Article  Google Scholar 

  15. 15.

    L. Chernyak, A. Osinsky, G. Nootz, A. Schulte, J. Jasinski, M. Benamara, Z. LilientalWeber, D.C. Look, R.J. Molnar, Appl. Phys. Lett. 77, 2695 (2000).

    CAS  Article  Google Scholar 

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Correspondence to Leonid Chernyak.

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Chernyak, L., Burdett, W. Electron Injection-Induced Effects in GaN: Physics and Applications. MRS Online Proceedings Library 764, 54 (2002). https://doi.org/10.1557/PROC-764-C5.4

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