In an effort to investigate the stability of the surface and hetero-interface of AlGaN/GaN HEMTs during high temperature device processing steps, AlGaN/GaN HEMT samples were subjected to temperatures from 650°C to 1150°C for a period of 30 seconds prior to processing. Hall and photoluminescence measurements were performed on samples before and after temperature stressing. The samples annealed at 700°C and 1150°C were then processed, and electrical parametric data were collected during and after processing. Large increases in HEMT Schottky gate diode reverse leakage current are observed at higher pre-process annealing temperatures, while the low-field mobility decreases.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
V. Kumar, W. Lu, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. Asif Khan, and Ilesanmi Adesida, IEEE Electron Device Lett. 23, 455,(2002).
Rashmi, A. Kranti, S. Haldar, R.S. Gupta, Microelectronics Journal 33, 205 (2002).
S.T. Bradley, et. al., IEEE Transactions on Electron Devices 48, 412, (2001).
G.H. Jessen, et. al., Solid-State Electronics 46, 1427, (2002).
J.C. Zolper, D.J. Rieger, A.G. Baca, S.J. Pearton, J.W. Lee, and R.A. Stall, Appl. Phys. Lett. 69,538,(1996).
About this article
Cite this article
Yannuzzi, M.J., Moser, N.A., Fitch, R.C. et al. Effects of Pre-Process Temperature Stressing on AlGaN/GaN HEMT Structures. MRS Online Proceedings Library 764, 42 (2002). https://doi.org/10.1557/PROC-764-C4.2