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Effects of Pre-Process Temperature Stressing on AlGaN/GaN HEMT Structures

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Abstract

In an effort to investigate the stability of the surface and hetero-interface of AlGaN/GaN HEMTs during high temperature device processing steps, AlGaN/GaN HEMT samples were subjected to temperatures from 650°C to 1150°C for a period of 30 seconds prior to processing. Hall and photoluminescence measurements were performed on samples before and after temperature stressing. The samples annealed at 700°C and 1150°C were then processed, and electrical parametric data were collected during and after processing. Large increases in HEMT Schottky gate diode reverse leakage current are observed at higher pre-process annealing temperatures, while the low-field mobility decreases.

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Authors and Affiliations

  1. Air Force Research Laboratory Sensors Directorate, Electron Devices, 45433-7322, Wright-Patterson AFB, OH, U.S.A.

    Mark J. Yannuzzi, Neil A. Moser, Robert C. Fitch, Gregg H. Jessen, James K. Gillespie, Glen D. Via, Antonio Crespo & Thomas J. Jenkins

  2. Wright State University, 45435, Dayton, OH, U.S.A.

    David C. Look & Donald C. Reynolds

Authors
  1. Mark J. Yannuzzi
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  2. Neil A. Moser
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  3. Robert C. Fitch
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  4. Gregg H. Jessen
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  5. James K. Gillespie
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  6. Glen D. Via
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  7. Antonio Crespo
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  8. Thomas J. Jenkins
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  9. David C. Look
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  10. Donald C. Reynolds
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Yannuzzi, M.J., Moser, N.A., Fitch, R.C. et al. Effects of Pre-Process Temperature Stressing on AlGaN/GaN HEMT Structures. MRS Online Proceedings Library 764, 42 (2002). https://doi.org/10.1557/PROC-764-C4.2

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  • DOI: https://doi.org/10.1557/PROC-764-C4.2

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