The Investigation of Preferred Orientation Growth of ZnO Films on the Ceramic Substrates

Abstract

Poly-crystal ZnO films with c-axis (002) orientation have been successfully grown on the lead-based ceramic substrates by r.f. magnetron sputtering technique. The deposited films were characterized as a function of deposition time and argon-oxygen gas flow ratio. Crystalline structures of the films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). Highly oriented films with c-axis normal to the substrates can be obtained by depositing under a total pressure of 10mTorr containing 50% argon and 50% oxygen and r.f. power of 70W for 3 hours. The phase velocity, electromechanical coupling coefficient and temperature coefficient of frequency of SAW device with ZnO/IDT/PT-ceramic structure were investigated. It shows that the preferred oriented ZnO film is beneficial for improving the electromechanical coupling coefficient of SAW device.

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Correspondence to Sheng-Yuan Chu.

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Chu, SY., Chen, TY., Water, W. et al. The Investigation of Preferred Orientation Growth of ZnO Films on the Ceramic Substrates. MRS Online Proceedings Library 764, 36 (2002). https://doi.org/10.1557/PROC-764-C3.6

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