Thermal Boundary Resistance and Heat Diffusion in AlGaN/GaN HFETs

Abstract

We theoretically investigate the thermal boundary resistance and heat diffusion in AlGaN/GaN heterostructure field-effect transistors. Our calculations based on the diffuse mismatch model show that the thermal boundary resistance at the interface between GaN and SiC can strongly influence the temperature rise in the device channel.

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Correspondence to Konstantin A. Filippov.

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Filippov, K.A., Balandin, A.A. Thermal Boundary Resistance and Heat Diffusion in AlGaN/GaN HFETs. MRS Online Proceedings Library 764, 357 (2002). https://doi.org/10.1557/PROC-764-C3.57

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