Abstract
We have investigated a new method by which selective high doping concentration of GaN can be obtained using XeCl excimer laser and presented low ohmic contact resistance fabricated by the proposed method. We have irradiated silicon film deposited by sputtering on GaN using XeCl excimer laser and formed ohmic contact on the region irradiated by laser. Ohmic contact resistance by laser doping process was effectively reduced to 0.27 ohm-mm while 0.66 ohm-mm was measured in ohmic contact by conventional method. We have verified that silicon is diffused into GaN by high laser energy during laser irradiation through SIMS analysis and ohmic contact resistance is reduced due to increase of doping concentration under ohmic contact region.
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Lee, SC., Her, JC., Han, SM. et al. Low Ohmic Contact Resistance of GaN by Employing XeCl Excimer Laser. MRS Online Proceedings Library 764, 352 (2002). https://doi.org/10.1557/PROC-764-C3.52
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DOI: https://doi.org/10.1557/PROC-764-C3.52