Effect of small dose gamma-irradiation on electrical characteristics of AlGaN/GaN high electron mobility transistors has been investigated. Decreasing of the leakage current and its noise has been registered after dose of 1×106 Rad. As-grown heterostructures used in further for the device fabrication have been examined after the same radiation treatment. The small dose radiation results are explained within a model that takes into account relaxation of elastic strains and structural-impurity ordering occurring in the barrier layer under irradiation.
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Vitusevich, S.A., Petrychuk, M.V., Klein, N. et al. Barrier Material Improvement in AlGaN/GaN Microwave Transistors Under Gamma Irradiation Treatment. MRS Online Proceedings Library 764, 331 (2002). https://doi.org/10.1557/PROC-764-C3.31