Cathodoluminescence, Electroluminescence, and Degradation of ZnCdSe Quantum Well Light Emitting Diodes

Abstract

We have studied luminescence and degradation of a ZnCdMgSe/ZnCdSe/ZnCdMgSe QW LED grown by MBE and lattice matched to its InP substrate. Results have been obtained from time-resolved and bias-dependent cathodoluminescence spectroscopy and from electroluminescence spectroscopy. Reversible and irreversible variations in luminescence intensity were observed during bias cycling and electron bombardment. Cathodoluminescence from the QW LED was modeled by calculating current generation and transport, bias-dependent energy levels, envelope wave functions, overlap integrals, and carrier escape rates. Results of these calculations agree qualitatively, but not quantitatively, with bias-dependent intensity and wavelength changes observed in the experiments.

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Correspondence to A. Yu. Nikiforov.

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Nikiforov, A.Y., Cargill, G.S., Guo, S.P. et al. Cathodoluminescence, Electroluminescence, and Degradation of ZnCdSe Quantum Well Light Emitting Diodes. MRS Online Proceedings Library 764, 318 (2002). https://doi.org/10.1557/PROC-764-C3.18

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