Effect of Si Layer in The ZnO Thin Films by Pulsed Laser Deposition

MRS Online Proceedings Library volume 764, Article number: 312 (2002) Cite this article

Abstract

ZnO thin films and ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at 300°C in oxygen ambient pressure. The optical and structural properties changed by Si layer in ZnO thin film. UV and visible peak position was shifted by Si layer. Electrical properties of the films were improved slightly than ZnO thin film without Si layer. The optical and structural properties of ZnO thin films and ZnOSi-ZnO multi-layer thin films were characterized by PL (Photoluminescence) and XRD(X-ray diffraction method), respectively. Electrical properties were measured by van der Pauw Hall measurements.

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  1. Dept. of Electrical and Electronic Engineering, Yonsei University, 134, Shinchon-dong, 120-749, Seodaemoon-ku, Seoul, Korea

    Hong Seong Kang, Jeong Seok Kang, Jae Won Kim & Sang Yeol Lee

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  1. Hong Seong Kang
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  2. Jeong Seok Kang
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  3. Jae Won Kim
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  4. Sang Yeol Lee
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Correspondence to Hong Seong Kang.

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Kang, H.S., Kang, J.S., Kim, J.W. et al. Effect of Si Layer in The ZnO Thin Films by Pulsed Laser Deposition. MRS Online Proceedings Library 764, 312 (2002). https://doi.org/10.1557/PROC-764-C3.12

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