HVPE-GROWN AlGaN/GaN HEMTs

Abstract

High quality undoped AlGaN/GaN high electron mobility transistors(HEMTs) structures have been gorwn by Hydride Vapor Phase Epitaxy (HVPE). The morphology of the films grown on Al2O3 substrates is excellent with root-mean-square roughness of ∼0.2nm over 10×10μm2 measurement area. Capacitance-voltage measurements show formation of dense sheet of charge at the AlGaN/GaN interface. HEMTs with 1μm gate length fabricated on these structures show transconductances in excess of 110 mS/mm and drain-source current above 0.6A/mm. Gate lag measurements show similar current collapse characteristics to HEMTs fabricated in MBE- or MOCVD grown material.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    H. P. Maruska and J. J. Tietzer, Appl. Phys. Lett. 15, 367(1969).

    Article  Google Scholar 

  2. 2.

    R. J. Molnar, in “GaN-II”, ed. J. I. Peenkove and T. D. Movstakas, (Academic Press, NY 1999).

  3. 3.

    R. P. Vaudo and V. M. Phanse, Electrochem. Sco. Proc. 19-18, 79(1998).

    Google Scholar 

  4. 4.

    D. Doppalapudi and T. D. Movstakus, in Handbook of Thin Films ed. H. S. Nalwa, Vol. 4 (Academic Press, NY 2002).

  5. 5.

    R. Molnar, W. Goetz, L. T. Rornano and N. M. Johnson, J. Cryst. Growth. 178, 147(1996).

    Article  Google Scholar 

  6. 6.

    T. Detchprohm, K. Hiramatsv, H. Amono and I. Alcasaki, Appl. Phys. Lett. 61, 2688(1992).

    CAS  Article  Google Scholar 

  7. 7.

    P. Gibart and B. Beaumant, in GaN-based Technologies, ed. M. Osinski (SPIE Optical Engineering Series, Washington, 2002).

  8. 8.

    H. Morhoc, Mat. Sci. Eng. R33, 135(2001).

    Article  Google Scholar 

  9. 9.

    M. K. Kelly, R. P. Vaudo, V. M. Phanse, L. Gorgens, O. Ambacher and M. Stutzmana, Jpn. J. Appl. Phys. 38, L217(1999).

    CAS  Article  Google Scholar 

  10. 10.

    S. S. Park, I.-W. Park and S. H. Chok, Jpn. J. Appl. Phys. 39, L1141(2000).

    CAS  Article  Google Scholar 

  11. 11.

    K. Lee and K. Auh, Jpn. J. Appl. Phys. 40, L13(2001).

    CAS  Article  Google Scholar 

  12. 12.

    S. T. Kim, Y. J. Lee, D. C. Moon, C. Hong and T. K. Soo, Semicond. Sci. Technol. 14, 278(1999).

    CAS  Article  Google Scholar 

  13. 13.

    Y. V. Melaik, K. V. Vassilevski, I. P. Nikitina, A. I. Babanin, Y. Davydov and A. V. Dmitriev, MRS Technol J. Nitride Semicond. Res. 2, 39(1997).

    Article  Google Scholar 

  14. 14.

    A. Wakahara, T. Yamamoko, K. Ishio, A. Yoshida, Y. Seki, K. Kainosho and O. Oda, Jpn. J. Appl. Phys. 39, 2399(2000).

    CAS  Article  Google Scholar 

  15. 15.

    O. Kryliovk, M. Reed, T. Dann and T. J. Anderson, Mat. Sci. Eng. B66, 26(1999).

    Article  Google Scholar 

  16. 16.

    K. Motoki, Jpn. J. Appl. Phys. 40, L140(2001).

    CAS  Article  Google Scholar 

  17. 17.

    S. Nagahamn, N. Iwasa, M. Senoh, T. Matsushita, Y. Sugimoto, H. Kikoyv, T. Kozaki, M. Suno, H. Matsumura, H. Vinemoko, K. Kocho and T. Mukai, Jpn. J. Appl. Phys. 39, L647(2000).

    Article  Google Scholar 

  18. 18.

    J. C. Zolper, Tech Digest IEDM 389, 16.1.1 (1999).

    Google Scholar 

  19. 19.

    see for example, the papers in the special issue on GaN Electronics, IEEE Trans Electron. Dev. ED48, (2001), ed J. C. Zolper and V. K. Mishra .

  20. 20.

    R. T. Kemeley, H. B. Wallace and M. N. Yoder, Proc. IEEE 90, 1059(2002).

    Article  Google Scholar 

  21. 21.

    V. K. Mishra, P. Parikh and Y.-F. Wu, Proc. IEEE 90, 1022(2002).

    CAS  Article  Google Scholar 

  22. 22.

    R. J. Trew, Proc. IEEE 90, 1032(2002).

    CAS  Article  Google Scholar 

  23. 23.

    S. J. Pearton, F. Ren, A. P. Zhang and K. P. Lee, Mat. Sci. Eng. R.30, 55(2000).

    Article  Google Scholar 

  24. 24.

    J. W. Johnson, F. Ren, S. J. Pearton, A. G. Baca, J. Han, A. M. Dabiran and P. P. Chow, J. Nanosci. Nanotech. 2, 325(2002).

    CAS  Article  Google Scholar 

  25. 25.

    S. C. Binari, K. Ikossi, J. A. Roussos, W. Kruppa, D. Park, H. B. Dietrich, D. D. Koleske, A. E. Wickenden and R. L. Henry, IEEE Trans. Electron. Dev. 48, 465(2001).

    CAS  Article  Google Scholar 

  26. 26.

    B. Luo, J. W. Johnson, J. Kim, R. M. Mehandru, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, A. G. Baca, R. D. Briggs, R. J. Shul, C. Monier and J. Han, Appl. Phys. Lett. 80, 1661(2002).

    CAS  Article  Google Scholar 

  27. 27.

    J. Gillespie, R. C. Fitch, J. Sewell, R. Dettmer, G. Via, A. Crespo, T. Jenkins, B. Luo, R. Mehandru, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy and S. J. Pearton, IEEE Trans. Electron. Dev. 23, 505(2002).

    CAS  Article  Google Scholar 

  28. 28.

    B. Luo, R. Mehandru, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy S. J. Pearton, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo and Y. Irokawa, J. Electrochem. Soc., 149, G613 (2002).

    CAS  Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to B. Luo.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Luo, B., Ren, F., Mastro, M.A. et al. HVPE-GROWN AlGaN/GaN HEMTs. MRS Online Proceedings Library 764, 23 (2002). https://doi.org/10.1557/PROC-764-C2.3

Download citation