Abstract
High quality undoped AlGaN/GaN high electron mobility transistors(HEMTs) structures have been gorwn by Hydride Vapor Phase Epitaxy (HVPE). The morphology of the films grown on Al2O3 substrates is excellent with root-mean-square roughness of ∼0.2nm over 10×10μm2 measurement area. Capacitance-voltage measurements show formation of dense sheet of charge at the AlGaN/GaN interface. HEMTs with 1μm gate length fabricated on these structures show transconductances in excess of 110 mS/mm and drain-source current above 0.6A/mm. Gate lag measurements show similar current collapse characteristics to HEMTs fabricated in MBE- or MOCVD grown material.
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Luo, B., Ren, F., Mastro, M.A. et al. HVPE-GROWN AlGaN/GaN HEMTs. MRS Online Proceedings Library 764, 23 (2002). https://doi.org/10.1557/PROC-764-C2.3
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DOI: https://doi.org/10.1557/PROC-764-C2.3