Phase Stability of Beta-gallia Rutile Intergrowths: (Ga,In)4(Sn,Ti)n-4O2n-2

MRS Online Proceedings Library volume 756, Article number: 312 (2002) Cite this article

Abstract

Beta-gallia-rutile (BGR) intergrowths possess one-dimensional tunnels that are suitable hosts for small-to-medium cations, thereby making them potential candidates for ion conductors, ion separators, battery electrodes, and chemical sensors. The BGR intergrowths are a series of homologous compounds expressed generically as Ga4Mn-4O2n-2, where n is an integer; and M is a tetravalent cation that forms a rutile-type oxide. In an attempt to identify materials with high tunnel densities and higher contents of a reducible M4+ cation, we are mapping the compositional stability regions of intergrowths expressed as Ga4–4xIn4xSn(n-4)(1-y)Ti(n-4)yO2n-2 where n = 6, 7 and 9 and 0.15 < x < 0.30 and 0 < y < 1.0. Polycrystalline samples were prepared by solid-state reaction at 1250 – 1400 °C and characterized by X-ray diffraction. Factors that affect phase stability are discussed.

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Affiliations

  1. School of Ceramic Engineering and Material Science, Alfred University, 14802, Alfred, NY, U.S.A.

    Malin Charoenwongsa & Doreen D. Edwards

Authors
  1. Malin Charoenwongsa
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  2. Doreen D. Edwards
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Correspondence to Malin Charoenwongsa.

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Charoenwongsa, M., Edwards, D.D. Phase Stability of Beta-gallia Rutile Intergrowths: (Ga,In)4(Sn,Ti)n-4O2n-2. MRS Online Proceedings Library 756, 312 (2002). https://doi.org/10.1557/PROC-756-EE3.12

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