Interface Conduction between Conductive ReO3 Thin Film and NdBa2Cu3O6 Thin Film

MRS Online Proceedings Library volume 751, Article number: 57 (2002) Cite this article

Abstract

The Re oxide films were deposited on quartz glasses by RF reactive sputtering from a Re metal target. The lowest resistivity was observed in the film in-situ annealed at 200?C in Ar atmosphere and showed the order of 10-4 Ωcm of which the value was still about 10 times as large as that of a single crystal ReO3. The temperature dependence of the resistivity revealed a metallic behavior. A superconductivity did not take place in the bilayered film of ReO3 / NdBa2Cu3O6. In the interface region the resistivity minimum probably caused by the Kondo effect was observed in the neighborhood of 120K.

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Affiliations

  1. Department of Electronics & Computer Science, College of Science & Technology, Nihon University, 7–24–1 Narashinodai, Funabashi-shi, 274–8501, Chiba, Japan

    Manabu Ohkubo, Kumiko Fukai, Kohji Matsuo, Nobuyuki Iwata & Hiroshi Yamamoto

Authors
  1. Manabu Ohkubo
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  2. Kumiko Fukai
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  3. Kohji Matsuo
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  4. Nobuyuki Iwata
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  5. Hiroshi Yamamoto
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Correspondence to Manabu Ohkubo.

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Ohkubo, M., Fukai, K., Matsuo, K. et al. Interface Conduction between Conductive ReO3 Thin Film and NdBa2Cu3O6 Thin Film. MRS Online Proceedings Library 751, 57 (2002). https://doi.org/10.1557/PROC-751-Z5.7

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