Bismuth-Induced Layer-by-Layer Growth in the Homoepitaxial Growth of Fe(100)

MRS Online Proceedings Library volume 749, Article number: 45 (2002) Cite this article

Abstract

We have investigated the effect of Bi on the homoepitaxial growth of Fe(100) by means of reflection high-energy electron diffraction (RHEED). It was clearly found that Bi induces layer-by-layer growth of Fe on Fe(100)-c(2×2)O reconstruction surface. The result of the dependence of the growth behavior as a function of Bi layer thickness suggests that there is optimum amount of Bi surfactant layer that induces the smoother layer-by-layer growth. A strong surface segregation of Bi was found at the top of surface and acts as a surfactant by promoting the interlayer transport.

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Affiliations

  1. Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, 153-8505, Meguro-ku, Tokyo, Japan

    Masao Kamiko, Hiroaki Chihaya, Hiroyuki Mizuno & Ryoichi Yamamoto

  2. National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 5, Higashi 1-1, 305-8565, Tsukuba, Ibaraki, Japan

    Junhua Xu & Isao Kojima

Authors
  1. Masao Kamiko
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  2. Hiroaki Chihaya
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  3. Hiroyuki Mizuno
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  4. Junhua Xu
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  5. Isao Kojima
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  6. Ryoichi Yamamoto
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Correspondence to Masao Kamiko.

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Kamiko, M., Chihaya, H., Mizuno, H. et al. Bismuth-Induced Layer-by-Layer Growth in the Homoepitaxial Growth of Fe(100). MRS Online Proceedings Library 749, 45 (2002). https://doi.org/10.1557/PROC-749-W4.5

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