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First-principles calculation of the effect of strain on the diffusion of Ge adatoms on Si and Ge (001) surfaces

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Abstract

First-principles calculations are used to calculate the strain dependencies of the binding and diffusion-activation energies for Ge adatoms on both Si(001) and Ge(001) c(4×2) reconstructed surfaces. Our calculations reveal that over the range of strains typically sampled during quantum dot self-assembly (0 to 1% compressive strain) the binding and activation energies on a strained Ge(001) surface increase and decrease, respectively, by 0.21 eV and 0.12 eV. For a growth temperature of 600 °C, these strain-dependencies give rise to a 16-fold increase in adatom density and a 5-fold decrease in adatom diffusivity in the region of compressive strain surrounding a Ge island with a characteristic size of 10 nm lying on top of a Si substrate covered by a Ge wetting layer.

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Authors and Affiliations

  1. Materials Science & Engineering Department, Northwestern University, 60208-3108, 2/10/2003, Evanston, IL, USA

    A. van de Walle, M. Asta & P. W. Voorhees

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  1. A. van de Walle
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  2. M. Asta
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  3. P. W. Voorhees
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van de Walle, A., Asta, M. & Voorhees, P.W. First-principles calculation of the effect of strain on the diffusion of Ge adatoms on Si and Ge (001) surfaces. MRS Online Proceedings Library 749, 2010 (2002). https://doi.org/10.1557/PROC-749-W20.10

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