The surfactant effects of antimony on the formation of InAsSb nanostructures on GaAs by metal-organic chemical vapor deposition

MRS Online Proceedings Library volume 749, Article number: 26 (2002) Cite this article

Abstract

We have investigated InAsSb nanostructures formed on GaAs during MOCVD. The transition thickness from 2D growth to 3D growth is reduced by the addition of TMSb/Sb4. This is consistent with both an increase in the adatom diffusion length and a reduction in the epilayer/vapor surface energy attributed TMSb/Sb4.

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Affiliations

  1. Sandia National Laboratories, P.O. Box 5800, 87185-0601, Albuquerque, NM, USA

    J. G. Cederberg & R. M. Biefeld

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  1. J. G. Cederberg
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  2. R. M. Biefeld
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Correspondence to J. G. Cederberg.

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Cederberg, J.G., Biefeld, R.M. The surfactant effects of antimony on the formation of InAsSb nanostructures on GaAs by metal-organic chemical vapor deposition. MRS Online Proceedings Library 749, 26 (2002). https://doi.org/10.1557/PROC-749-W2.6

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