Comparison of Growth Morphology in Ge (001) Homoepitaxy Using Pulsed Laser Deposition and MBE

MRS Online Proceedings Library volume 749, Article number: 1611 (2002) Cite this article

Abstract

Differences in the homoepitaxy of Ge(001) are explored using a dual MBE/PLD deposition system. With identical substrate preparation, temperature calibration, background pressure and analysis, the system provides a unique comparison of the processes arising only from kinetic differences in the flux and at the surface. All films show mounded growth. At substrate temperatures below 200°C, PLD films are smoother than MBE films, whereas they are similar at higher temperatures.

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Affiliations

  1. Division of Engineering and Applied Sciences, Harvard University, 02138, Cambridge, MA, USA

    John P. Leonard, Byungha Shin, James W. McCamy & Michael J. Aziz

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  1. John P. Leonard
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  2. Byungha Shin
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  3. James W. McCamy
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  4. Michael J. Aziz
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Correspondence to John P. Leonard.

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Leonard, J.P., Shin, B., McCamy, J.W. et al. Comparison of Growth Morphology in Ge (001) Homoepitaxy Using Pulsed Laser Deposition and MBE. MRS Online Proceedings Library 749, 1611 (2002). https://doi.org/10.1557/PROC-749-W16.11

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