Adatom Diffusion on Strained Si(001)-(2×1) Surface

MRS Online Proceedings Library volume 749, Article number: 131 (2002) Cite this article

Abstract

The effects of a buried germanium island inside silicon substrate on the silicon adatom diffusion on the substrate surface have been studied by kinetic Monte Carlo simulations. The confinement of adatoms caused by the strain field of the germanium island can clearly be seen. Moreover, due to the anisotropy in adatom diffusion the confinement in directions parallel and perpendicular to the dimer rows of the surface take place in different temperatures.

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Author notes

  1. Krister Henriksson

    Present address: Accelerator Laboratory, University of Helsinki, P.O.Box 43, FIN-00014, Finland

Affiliations

  1. Laboratory of Computational Engineering, Helsinki University of Technology, P.O.Box 9400, FIN-02015 HUT, Finland

    Antti Kuronen, Krister Henriksson & Kimmo Kaski

Authors
  1. Antti Kuronen
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  2. Krister Henriksson
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  3. Kimmo Kaski
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Correspondence to Antti Kuronen.

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Kuronen, A., Henriksson, K. & Kaski, K. Adatom Diffusion on Strained Si(001)-(2×1) Surface. MRS Online Proceedings Library 749, 131 (2002). https://doi.org/10.1557/PROC-749-W13.1

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