Adatom Diffusion on Strained Si(001)-(2×1) Surface

Abstract

The effects of a buried germanium island inside silicon substrate on the silicon adatom diffusion on the substrate surface have been studied by kinetic Monte Carlo simulations. The confinement of adatoms caused by the strain field of the germanium island can clearly be seen. Moreover, due to the anisotropy in adatom diffusion the confinement in directions parallel and perpendicular to the dimer rows of the surface take place in different temperatures.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    D. Bimberg, M. Grundmann, and N. Ledentsov, Quantum Dot Heterostructures (Wiley, Chichester, 1999).

  2. 2.

    J. Tersoff, C. Teichert, and M. G. Lagally, Phys. Rev. Lett. 76, 1675 (1996).

    CAS  Article  Google Scholar 

  3. 3.

    G. Springholz, V. Holy, M. Pinczolits, and G. Bauer, Science 282, 734 (1998).

    CAS  Article  Google Scholar 

  4. 4.

    I. Kegel, T. H. Metzger, J. Peisl, J. Stangl, G. Bauer, and D. Smilgies, Phys. Rev. B 60, 2516 (1999).

    CAS  Article  Google Scholar 

  5. 5.

    L. Nurminen, A. Kuronen, and K. Kaski, Phys. Rev. B 63, 035407 (2001).

    Article  Google Scholar 

  6. 6.

    J. Tersoff, Phys. Rev. B 37, 6991 (1988).

    CAS  Article  Google Scholar 

  7. 7.

    C. Pryor, J. Kim, L. W. Wang, A. J. Williamson, and A. Zunger, J. Appl. Phys. 83, 2548 (1998).

    CAS  Article  Google Scholar 

  8. 8.

    D. J. Shu, F. Liu, and X. G. Gong, Phys. Rev. B 64, 245410 (2001).

    Article  Google Scholar 

  9. 9.

    M. Kotrla, Comput. Phys. Commun. 97, 82 (1996).

    CAS  Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to Antti Kuronen.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Kuronen, A., Henriksson, K. & Kaski, K. Adatom Diffusion on Strained Si(001)-(2×1) Surface. MRS Online Proceedings Library 749, 131 (2002). https://doi.org/10.1557/PROC-749-W13.1

Download citation