Recrystallization of Implanted LPCVD Amorphous Si Films Using Rapid Thermal Annealing

MRS Online Proceedings Library volume 74, Article number: 725 (1986) Cite this article

Abstract

The effect of rapid thermal annealing on the crystallization of arsenic and boron implanted amorphous silicon films is studied. Amorphous Si films of 4000 Å were deposited using LPCVD and implanted with arsenic or boron to doses of 5 × 1013, 5 × 1014, and 5 × 1015 cm−2. These films were then annealed using an Eaton Nova-400 RTA system (with temperature ranging from 900 to 1200 °C and dwell time ranging from 1 to 30 sec). The annealed films were studied using transmission electron microscopy, Hall effect measurement and temperature coefficient of resistance measurement. The optimal annealing conditions for the films were found.

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Affiliations

  1. Department of Electrical and Computer Engineering, University of Notre Dame, IN, 46556, Notre Dame, USA

    R. Kwor & S. M. Tang

  2. Delco Electronics, IN, 46902, Kokomo, USA

    N. S. Alvi

Authors
  1. R. Kwor
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  2. S. M. Tang
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  3. N. S. Alvi
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Kwor, R., Tang, S.M. & Alvi, N.S. Recrystallization of Implanted LPCVD Amorphous Si Films Using Rapid Thermal Annealing. MRS Online Proceedings Library 74, 725 (1986). https://doi.org/10.1557/PROC-74-725

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