The effect of rapid thermal annealing on the crystallization of arsenic and boron implanted amorphous silicon films is studied. Amorphous Si films of 4000 Å were deposited using LPCVD and implanted with arsenic or boron to doses of 5 × 1013, 5 × 1014, and 5 × 1015 cm−2. These films were then annealed using an Eaton Nova-400 RTA system (with temperature ranging from 900 to 1200 °C and dwell time ranging from 1 to 30 sec). The annealed films were studied using transmission electron microscopy, Hall effect measurement and temperature coefficient of resistance measurement. The optimal annealing conditions for the films were found.
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Kwor, R., Tang, S.M. & Alvi, N.S. Recrystallization of Implanted LPCVD Amorphous Si Films Using Rapid Thermal Annealing. MRS Online Proceedings Library 74, 725 (1986). https://doi.org/10.1557/PROC-74-725