Titanium-Silicon Interactions During Ion Beam Irradiation


As* ion beam irradiation of thin titanium (∼300Å) films deposited on silicon substrates at sufficiently high dose and energy has been shown to induce an athermal thin film reaction (as evidenced by insenstivity of the reaction to irradiation current) leading to the formation of a homogeneous titanium subsilicide phase with an extremely smooth interface to the underlying silicon. RBS indicates a stoichiometry of Ti3Si4 for this silicide phase. Subsequent rapid thermal annealing (RTA) of this silicide results in the incorporation of additional silicon leading ultimately to the formation of the stable C-54 TiSi2 phase. Silicided junctions fabricated using a ion beam irradiation show improved sheet resistance uniformity and leakage characteristics when compared with those fabricated using the conventional RTA salicide process.

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  1. 1.

    S. Murarka ed., “Silicides for VLSI Applications”, Academic Press, London, (1983).

  2. 2.

    T. P. Chow, IEE Trans. Elect. Dev. ED-30, 1481 (1983).

    Google Scholar 

  3. 3.

    T. Shibata, K. Hieda, M. Sato, M. Konaka, R. L.M. Dang, H. Iizuka, IEEE IEDM, Washington, D. C., p647 (1981).

  4. 4.

    B. Y. Tsuar, C. K. Chen, C. H. Anderson Jr. and D. L. Kwong, J Appl Phys., 57, 1890 (1985).

    Article  Google Scholar 

  5. 5.

    K. L Wang, F. Bacon and R. F. Reihl, J. Vac. Sci. Technol., 16, 1909 (1979).

    CAS  Article  Google Scholar 

  6. 6.

    U. N. Mitra, P. W. Davies, R. K. Shukla and J. S. Multani, Proceedings of the Fifth International Symposium on Silicon Materials Science and Technology (Proceedings of the Electrochemical Society 86–4), 316 (1986).

  7. 7.

    P. W. Davies, B. Tracy, U. N. Mitra, R. K. Shukla, J. S. Multani, to be published, J. Electrochem. Soc. (1987).

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Tracy, B.M., Shukla, R.K. & Davies, P.W. Titanium-Silicon Interactions During Ion Beam Irradiation. MRS Online Proceedings Library 74, 659 (1986). https://doi.org/10.1557/PROC-74-659

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