A new approach is proposed for the material improvement of silicon-on-sapphire (SOS). This approach utilizes the phenomena that the defect elimination throughout the silicon layer depends on both the deep and shallow self-implantations of the double solid phase epitaxial growth (DSPEG) technique for SOS material improvement. The new aspects of this approach are that the deep implantation does not form an amorphous layer, and therefore the ion damage to the substrate is minimized eliminating Al autodoping of the silicon layer.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
J. Amano and K. W. Carey, J. Cryst. Growth 56, 296 (1982); K. W. Carey, F. A. Ponce, J. Amano, J. Aranovich, J. Appl. Phys. 54, 4414 (1983).
Eliezer Dovid Richmond, Alvin R. Knudson, T. J. Magee, H. Kawayoshi, and C. Leung, J. Vac. Sci. Technol A2, 569 (1984).
Eliezer Dovid Richmond, A. R. Knudson, T. J. Magee, and H. Kawayoshi, J. Cryst. Growth 80., No. 1 (1987).
Eliezer Dovid Richmond, A. R. Knudson, T. J. Magee, and H. Kawayoshi, J. Vac Sci. Technol. A3, 905 (1985).
Heinrich Schlotterer, J. Vac. Sci. Technol. 13, 29 (1976).
R. E. Reedy and T. W. Sigmon, J. Cryst. Growth 58, 53 (1982).
G. D. Robertson, P. K. Vasudev, R. G. Wilson, and V. R. Deline, Appl. Surface Sci. 14, 128 (1982–83).
J. M. Baribeau, J. E. Jackman, P. Maigne, D. C. Houghton, H. W. Denhoff, J. Vac. Sci. Technol. A5 (1987)
About this article
Cite this article
Richmond, E., Knudson, A.R. & Kawayoshi, H. New DSPEG Approach to Improvement of SOS Using Low Dose Self-Implantations. MRS Online Proceedings Library 74, 615 (1986). https://doi.org/10.1557/PROC-74-615