New DSPEG Approach to Improvement of SOS Using Low Dose Self-Implantations

MRS Online Proceedings Library volume 74, Article number: 615 (1986) Cite this article

Abstract

A new approach is proposed for the material improvement of silicon-on-sapphire (SOS). This approach utilizes the phenomena that the defect elimination throughout the silicon layer depends on both the deep and shallow self-implantations of the double solid phase epitaxial growth (DSPEG) technique for SOS material improvement. The new aspects of this approach are that the deep implantation does not form an amorphous layer, and therefore the ion damage to the substrate is minimized eliminating Al autodoping of the silicon layer.

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Affiliations

  1. Naval Research Laboratory, D.C., Code 6816, 20375-5000, Washington, USA

    Eliezer Dovid Richmond & Alvin R. Knudson

  2. Advanced Research and Applications Corporation, CA., 94086, Sunnyvale, USA

    H. Kawayoshi

Authors
  1. Eliezer Dovid Richmond
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  2. Alvin R. Knudson
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  3. H. Kawayoshi
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Richmond, E., Knudson, A.R. & Kawayoshi, H. New DSPEG Approach to Improvement of SOS Using Low Dose Self-Implantations. MRS Online Proceedings Library 74, 615 (1986). https://doi.org/10.1557/PROC-74-615

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