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Radiation Damage Induced Transient Enhanced Diffusion of Dopants in Silicon

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Abstract

Transient enhanced diffusion is observed for P, As and Sb as a consequence of the recovery of the damage created by a silicon dose below the amorphization threshold. The phenomenon results more pronounced for low temperature furnace heating than after rapid thermal annealing and for those elements having a larger component of interstitialcy diffusion mechanism.

A close correlation was found between the trends of the anomalous dopant diffusion and the implant damage evolution analyzed by X-ray diffraction. This evolution takes place via interstitial cluster dissolution.

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References

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Authors and Affiliations

  1. CNR - Istituto LAMEL, Bologna, 1 - 40126, Via Castagnoli, Italy

    R. Angelucci, E. Gabilli, R. Lotti, P. Negrini, M. Servidori & S. Solmi

  2. Divisione di Scienza dei Materiali, Trento, IRST - 38050, Povo, Italy

    M. Anderle

Authors
  1. R. Angelucci
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  2. E. Gabilli
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  3. R. Lotti
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  4. P. Negrini
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  5. M. Servidori
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  6. S. Solmi
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  7. M. Anderle
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Angelucci, R., Gabilli, E., Lotti, R. et al. Radiation Damage Induced Transient Enhanced Diffusion of Dopants in Silicon. MRS Online Proceedings Library 74, 505 (1986). https://doi.org/10.1557/PROC-74-505

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  • DOI: https://doi.org/10.1557/PROC-74-505

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