Transient enhanced diffusion is observed for P, As and Sb as a consequence of the recovery of the damage created by a silicon dose below the amorphization threshold. The phenomenon results more pronounced for low temperature furnace heating than after rapid thermal annealing and for those elements having a larger component of interstitialcy diffusion mechanism.
A close correlation was found between the trends of the anomalous dopant diffusion and the implant damage evolution analyzed by X-ray diffraction. This evolution takes place via interstitial cluster dissolution.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
F. F.Morehead and R. T.Hogdson, “Energy Beam-Solid Interaction and Transient Thermal Processing 1984” (Materials Research Society, Pittsburgh PA) 35, 341 (1984)
R. Angelucci, P. Negrini and S. Solmi, Appl.Phys.Lett., in press.
A. E.Michel “Rapid Thermal Processing” (Materials Research Society, Pittsburgh PA) 52, 3 (1986)
M. Servidori, R. Angelucci, F. Cembali, P. Negrini, S. Solmi, P. Zaumseil and U. Winter, J. Appl.Phys., in press
F. Cembali, M. Servidori and A. Zani, Solid-St.Electron 28, 933 (1985)
L. Meda, G. F.Cerofolini and G. Ottaviani, Proc. of IBMM Int.Conf., Catania (Italy) 1986, Nucl.Instr. and Methods, in press.
G. S.Oehrlein, S. A.Cohen and T. O.Sedgwick, Appl.Phys.Lett. 45, 417 (984)
R. Angelucci, F. Cembali, P. Negrini, M. Servidori and S. Solmi, to be published.
About this article
Cite this article
Angelucci, R., Gabilli, E., Lotti, R. et al. Radiation Damage Induced Transient Enhanced Diffusion of Dopants in Silicon. MRS Online Proceedings Library 74, 505 (1986). https://doi.org/10.1557/PROC-74-505