Radiation Damage Induced Transient Enhanced Diffusion of Dopants in Silicon

Abstract

Transient enhanced diffusion is observed for P, As and Sb as a consequence of the recovery of the damage created by a silicon dose below the amorphization threshold. The phenomenon results more pronounced for low temperature furnace heating than after rapid thermal annealing and for those elements having a larger component of interstitialcy diffusion mechanism.

A close correlation was found between the trends of the anomalous dopant diffusion and the implant damage evolution analyzed by X-ray diffraction. This evolution takes place via interstitial cluster dissolution.

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Angelucci, R., Gabilli, E., Lotti, R. et al. Radiation Damage Induced Transient Enhanced Diffusion of Dopants in Silicon. MRS Online Proceedings Library 74, 505 (1986). https://doi.org/10.1557/PROC-74-505

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