Systematics of Silicide Formation by High Dose Miplantation of Transition Metals into Si

Abstract

We have systematically studied the formation of transition-metal thin films by high dose (up to 1018 ions/cm2) implantation of Ti, V, Cr, Mn, Fe, Co, Ni and Nb at room temperature and 350°C into Si <100>.

For implantation at 350°C, our results, as obtained by Rutherford backscattering, X-ray diffractometry and Read Camera measurements, indicate that one can categorize these metals into two groups:

  1. 1.

    a chromium group which includes V, Cr, Nb, Ti and Mn. Metals V, Cr and Nb form compounds (VSi2, CrSi2. NbSi2) with a hexagonal structure of the CrSi2 type whereas Ti and Mn both form compounds (Ti5Si3, Mn5Si3) with a hexagonal structure of the Mn5Si2 type.

  2. 2.

    an iron group which includes Fe, Co and Ni. These metals form compounds (FeSi, CoSi, NiSi) with a cubic structure of the FeSi type.

In this paper the experimental results for Cr and Fe implantation at room temperature and 350°C will be discussed.

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Namavar, F., Sanchez, F.H., Budnick, J.I. et al. Systematics of Silicide Formation by High Dose Miplantation of Transition Metals into Si. MRS Online Proceedings Library 74, 487 (1986). https://doi.org/10.1557/PROC-74-487

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