Double doping of Si by ion implantation of both group V and group III dopants was studied. For the case of Sb as the group V dopant, both Sb and B could be maintained in solution after high temperature heat treatment at concentrations greatly exceeding their solubility limits. With Sb implantation alone, Sb diffusion takes place with a highly enhanced transient diffusion, followed by nucleation of self interstitials into loops at the projected range. In certain double-doped samples this projected range damage was eliminated. In the under-compensated B-Sb case, evidence of stable Sb-B pairs was obtained.
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Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract DE-ACO5-840R21400 with Martin Marietta Energy Systems, Inc.
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Culbertson, R.J., Pennycook, S.J. Formation Of Stable Point Defects in Ion-Implanted Si. MRS Online Proceedings Library 74, 391 (1986). https://doi.org/10.1557/PROC-74-391