Formation Of Stable Point Defects in Ion-Implanted Si

MRS Online Proceedings Library volume 74, Article number: 391 (1986) Cite this article

Abstract

Double doping of Si by ion implantation of both group V and group III dopants was studied. For the case of Sb as the group V dopant, both Sb and B could be maintained in solution after high temperature heat treatment at concentrations greatly exceeding their solubility limits. With Sb implantation alone, Sb diffusion takes place with a highly enhanced transient diffusion, followed by nucleation of self interstitials into loops at the projected range. In certain double-doped samples this projected range damage was eliminated. In the under-compensated B-Sb case, evidence of stable Sb-B pairs was obtained.

This is a preview of subscription content, access via your institution.

Access options

Buy single article

Instant access to the full article PDF.

US$ 39.95

Tax calculation will be finalised during checkout.

References

  1. 1.

    S. J. Pennycook, R. J. Culbertson, and J. Narayan, J. Mat. Res. 1, 476 (1986).

    CAS  Article  Google Scholar 

  2. 2.

    R. J. Culbertson and S. J. Pennycook, in Beam-Solid Interactions and Phase Transformations, edited by H. Kurz, G. L. Olson, and J. M. Poate (Materials Research Society, Pittsburgh, PA, 1986), p. 357.

    Google Scholar 

  3. 3.

    Th. Wichert, M. L. Swanson, and A. F. Quenneville, Phys. Rev. Lett. 57, 1757 (1986).

    CAS  Article  Google Scholar 

  4. 4.

    M. L. Swanson, Th. Wichert, and A. F. Quenneville, Appl. Phys. Lett. 49, 265 (1986).

    CAS  Article  Google Scholar 

  5. 5.

    R. B. Fair, M. L. Manda, and J. J. Wortman, J. Mat. Res. 1, 705 (1986).

    CAS  Article  Google Scholar 

  6. 6.

    J. P. Biersack and W. Eckstein, J. Appl. Phys. A34, 73 (1984).

    Article  Google Scholar 

  7. 7.

    L. C. Feldman, J. W. Mayer, and S. T. Picraux, in Materials Analysis by Ion Channeling (Academic Press, NY, 1982).

    Google Scholar 

  8. 8.

    F. A. Trumbore, Bell System Tech. Journal 39, 205 (1960).

    Article  Google Scholar 

  9. 9.

    S. J. Pennycook and R. J. Culbertson, in Rapid Thermal Processing, edited by T. O. Sedgwick, T. E. Seidel, and B-Y Tsaur (Materials Research Society, Pittsburgh, PA, 1986), p. 37.

    Google Scholar 

  10. 10.

    S. J. Pennycook, J. Narayan, and O. W. Holland, J. Appl. Phys. 54, 6875 (1983).

    CAS  Article  Google Scholar 

Download references

Author information

Affiliations

  1. Solid State Division, Oak Ridge National Laboratory, TN, 37831, Oak Ridge, USA

    R. J. Culbertson & S. J. Pennycook

Authors
  1. R. J. Culbertson
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. S. J. Pennycook
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract DE-ACO5-840R21400 with Martin Marietta Energy Systems, Inc.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Culbertson, R.J., Pennycook, S.J. Formation Of Stable Point Defects in Ion-Implanted Si. MRS Online Proceedings Library 74, 391 (1986). https://doi.org/10.1557/PROC-74-391

Download citation