The amorphous-crystalline (with residual defects) transition is studied in several III-V binary semiconductors and a ternary alloy. Regrowth shows the same behaviour in all cases. The growth kinetics are thermally activated and the activation energies have been measured using time resolved reflectivity measurements. Correlation with vacancy migration characteristic energy is discussed. In the particular case of GaAs, high resolution electron micrograph of the growth front are displayed. They show a rough microscopic structures together with larger scale smooth deformations, attributed to diffusion instabilities.
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Licoppe, C., Nissim, Y.I., Meriadec, C. et al. Solid Phase Epitaxial Regrowth of Implanted III-V Materials and Alloys. MRS Online Proceedings Library 74, 385 (1986). https://doi.org/10.1557/PROC-74-385