Solid Phase Epitaxial Regrowth of Implanted III-V Materials and Alloys

MRS Online Proceedings Library volume 74, Article number: 385 (1986) Cite this article

Abstract

The amorphous-crystalline (with residual defects) transition is studied in several III-V binary semiconductors and a ternary alloy. Regrowth shows the same behaviour in all cases. The growth kinetics are thermally activated and the activation energies have been measured using time resolved reflectivity measurements. Correlation with vacancy migration characteristic energy is discussed. In the particular case of GaAs, high resolution electron micrograph of the growth front are displayed. They show a rough microscopic structures together with larger scale smooth deformations, attributed to diffusion instabilities.

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Affiliations

  1. C.N.E.T Laboratoire de Bagneux, 92220, Bagneux, France

    Christian Licoppe, Yves I. Nissim, Christelle Meriadec & Pierre Henoc

  2. C.N.E.T CNS, 38243, Meylan, France

    Cecile D’Anterroches

Authors
  1. Christian Licoppe
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  2. Yves I. Nissim
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  3. Christelle Meriadec
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  4. Pierre Henoc
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  5. Cecile D’Anterroches
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Licoppe, C., Nissim, Y.I., Meriadec, C. et al. Solid Phase Epitaxial Regrowth of Implanted III-V Materials and Alloys. MRS Online Proceedings Library 74, 385 (1986). https://doi.org/10.1557/PROC-74-385

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