Transient Enhanced Diffusion in B+ and P+ Implanted Silicon


We report the transient enhanced diffusion of supersaturated phosphorus in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or redissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follows their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactivation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.

This is a preview of subscription content, access via your institution.


  1. 1.

    W. K. Hofker, H. W. Werner, D. P. Oosthoek, and H. A. M. de Grefte, Appl. Phys. 2, 265 (1973).

    Article  Google Scholar 

  2. 2.

    J. Narayan, O. W. Holland, R. E. Eby, J. J. Wortman, V. Ozguz, and G. A. Rozgonyi, Appl. Phys. Lett. 43, 957 (1983).

    CAS  Article  Google Scholar 

  3. 3.

    K. Cho, M. Numan, T. G. Finstad, W. K. Chu, J. Liu, and J. J. Wortman, Appl. Phys. Lett. 47, 1321 (1985).

    CAS  Article  Google Scholar 

  4. 4.

    S. Solmi, S. Guimaraes, E. Landi, and P. Negrini, Semiconductor Silicon 1986, Electrochemical Society, Pennington, NJ, 1986, p. 583.

  5. 5.

    N. E. B. Cowern, K. J. Yallup, D. J. Godfrey, D. G. Hasko, R. A. McMahon, H. Ahmed, W. M. Stobbs, and D. S. McPhail, Mat. Res. Soc. Symp. Proc. 52, 65 (1986).

    CAS  Article  Google Scholar 

  6. 6.

    G. S. Oehrlein, S. A. Cohen, and T. O. Sedgwick, Appl. Phys. Lett. 45, 417 (1984).

    CAS  Article  Google Scholar 

  7. 7.

    N. E. B. Cowern, D. J. Godfrey, and D. E. Sykes, in press.

  8. 8.

    S. J. Pennycook, J. Narayan, and O. W. Holland, J. Electrochem. Soc. 132, 1962 (1985).

    CAS  Article  Google Scholar 

  9. 9.

    J. Narayan, O. W. Holland, and B. R. Appleton, J. Vac. Sci. Technol. B1, 871 (1983).

    CAS  Article  Google Scholar 

  10. 10.

    S. J. Pennycook, R. J. Culbertson, and J. Narayan, J. Mater. Res. 1, 476 (1986).

    CAS  Article  Google Scholar 

  11. 11.

    S. J. Pennycook and R. J. Culbertson, Mat. Res. Soc. Symp. Proc. 52, 37 (1986).

    CAS  Article  Google Scholar 

  12. 12.

    S. J. Pennycook, J. Narayan, and O. W. Holland, J. Appl. Phys. 55, 837 (1984).

    CAS  Article  Google Scholar 

  13. 13.

    C. Hill, Nucl. Inst. Methods B, in press.

  14. 14.

    G. Olsen, J. A. Rot, L. D. Hess, and J. Narayan, Mat. Res. Soc. Symp. Proc. 23, 375 (1984).

    Article  Google Scholar 

  15. 15.

    M. Servidori, C. Dal Monte, and Q. Zini, Phys. Stat. Sol. (a) 80, 277 (1983).

    CAS  Article  Google Scholar 

  16. 16.

    D. Nobili, A. Armigliato, M. Finetti,. and S. Solmi, J. Appl. Phys. 53, 1484 (1982).

    CAS  Article  Google Scholar 

  17. 17.

    J. Osugi, R. Namikawa, and Y. Tanaka, Rev. Phys. Chem. Japan 36, 35 (1966).

    CAS  Google Scholar 

  18. 18.

    M. F. Ashby and L. M. Brown, Phil. Mag. 8, 1083 (1963).

    Article  Google Scholar 

  19. 19.

    C. G. Beck and R. Stickler, J. Appl. Phys. 37, 4683 (1966).

    CAS  Article  Google Scholar 

  20. 20.

    T. Wadsten, Univ. Stockholm. Chem. Commun. No. 7, p. 1 (1973).

    Google Scholar 

  21. 21.

    M. Servidori and A. Armigliato, J. Mater. Sci. 10, 306 (1975).

    CAS  Article  Google Scholar 

  22. 22.

    G. Masetti, D. Nobili and S. Solmi, Semiconductor Silicon, Electrochemical Society, Pennington, NJ, 1977, p. 648.

    Google Scholar 

  23. 23.

    W. Frank, Radiat. Eff. 21, 119 (1974).

    CAS  Article  Google Scholar 

  24. 24.

    U. Gösele, Semiconductor Silicon 1986, Electrochemical Society, Pennington, NJ, 1986, p. 541.

  25. 25.

    J. Goetzlich, Mat. Res. Soc. Symp. Proc. 45, 349 (1985).

    CAS  Article  Google Scholar 

Download references

Author information



Additional information

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract DE-AC05-840R21400 with Martin Marietta Energy Systems, Inc.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Pennycook, S.J., Culbertson, R.J. Transient Enhanced Diffusion in B+ and P+ Implanted Silicon. MRS Online Proceedings Library 74, 379 (1986).

Download citation