Damage in single crystal ß-SiC(100) as a result of ion bombardment has been studied using Rutherford backscattering (RBS) and cross-section transmission electron microscopy (X-TEM). Samples were implanted with 123 keV27Al at liquid nitrogen temperature. RBS spectra for He channeling in the (110) axis at 45° were obtained as a function of implantation dose to determine damage accumulation. X-TEM was used to characterize damage structure for selected doses. The surface of the SiC becomes amorphous for doses greater than 1 x 1015 /cm2. At lower doses, significant uniaxial lattice strain along the (100) direction is suggested by comparison of RBS channeling spectra obtained for several high index axes. High resolution TEM on a sample implanted at 4 x 1014 /cm2 shows no damage structure in the surface region; lattice damage in a broad layer centered roughly at the depth of highest energy deposition is characterized by small amorphous pockets in a crystalline matrix. Qualitatively similar backscattering results were obtained for other elements implanted at room and liquid nitrogen temperature.
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J. A. Edmond, S. P. Withrow, H. S. Kong, and R. F. Davis, Beam-Solid Interactions and Phase Transformations, edited by H. Kurz, G. L. Olson, and J. M. Poate, (Materials Research Society Symposia Proceedings Vol. 51, Pittsburgh, 1986), p. 395.
See, for example, D. A. Thompson, A. Golanski, K. H. Haugen, and D. V. Stevanovic, Rad. Effects 52, 69 (1980); J. M. Poate and J. S. Williams, in Ion Implantation and Beam Processing, edited by J. S. Williams and J. M. Poate (Academic Press, New York, 1984), p. 13.
R. R. Hart, H. L. Dunlap and O. J. Marsh, Rad. Effects 9, 261 (1971); J. M. Williams, C. J. McHargue and B. R. Appleton, Nucl. Instr. and Meth. 209/210, 317 (1983); H. G. Bohn, J. M. Wiliams, C. J. McHargue and G. M. Begun, J. Materials Res., in press, and references therein.
J. A. Edmond, S. P. Withrow, William Wadlin, and R. F. Davis, Interfaces, Superlattices and Thin Films, edited by John D. Dow, Ivan K. Schuller, and John Hilliard, (Materials Research Society Symposia Proceedings Vol. 77, Pittsburgh, 1987), in press.
H. P. Liaw and R. F. Davis, J. Electrochem. Soc. 132, 642 (1985).
Donald S. Gemmell, Rev. Mod. Phys. 46, 217 (1974).
Materials Analysis by Ion Channeling, edited by Leonard C. Feldman, J. W. Mayer and S. Thomas Picraux, (Academic Press, New York, 1982), chaps. 4 and 5.
See for example, R. E. Whan and G. W. Arnold, Appl. Phys. Lett 17, 378 (1970); V. S. Speriosu, B. M. Paine, and M-A. Nicolet, Appl. Phys. Lett 40, 604 (1982); N. Herbots, B. R. Appleton, T. S. Noggle, S. J. Pennycook, R. A. Zuhr and D. M. Zehner, Semiconductor-Based Heterostructures: Interfacial Structure and Stability, edited by M. L. Green, to be published.
J. H. Barrett, private communication. See also J. H. Barrett, Phys. Rev. 166, 219 (1968).
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Withrow, S.P., More, K., Edmond, J.A. et al. Damage Production in B-Sic During Ion Implantation. MRS Online Proceedings Library 74, 373 (1986). https://doi.org/10.1557/PROC-74-373