Damage Production in B-Sic During Ion Implantation

MRS Online Proceedings Library volume 74, Article number: 373 (1986) Cite this article

Abstract

Damage in single crystal ß-SiC(100) as a result of ion bombardment has been studied using Rutherford backscattering (RBS) and cross-section transmission electron microscopy (X-TEM). Samples were implanted with 123 keV27Al at liquid nitrogen temperature. RBS spectra for He channeling in the (110) axis at 45° were obtained as a function of implantation dose to determine damage accumulation. X-TEM was used to characterize damage structure for selected doses. The surface of the SiC becomes amorphous for doses greater than 1 x 1015 /cm2. At lower doses, significant uniaxial lattice strain along the (100) direction is suggested by comparison of RBS channeling spectra obtained for several high index axes. High resolution TEM on a sample implanted at 4 x 1014 /cm2 shows no damage structure in the surface region; lattice damage in a broad layer centered roughly at the depth of highest energy deposition is characterized by small amorphous pockets in a crystalline matrix. Qualitatively similar backscattering results were obtained for other elements implanted at room and liquid nitrogen temperature.

This is a preview of subscription content, access via your institution.

We’re sorry, something doesn't seem to be working properly.

Please try refreshing the page. If that doesn't work, please contact support so we can address the problem.

References

  1. 1.

    J. A. Edmond, S. P. Withrow, H. S. Kong, and R. F. Davis, Beam-Solid Interactions and Phase Transformations, edited by H. Kurz, G. L. Olson, and J. M. Poate, (Materials Research Society Symposia Proceedings Vol. 51, Pittsburgh, 1986), p. 395.

    Google Scholar 

  2. 2.

    See, for example, D. A. Thompson, A. Golanski, K. H. Haugen, and D. V. Stevanovic, Rad. Effects 52, 69 (1980); J. M. Poate and J. S. Williams, in Ion Implantation and Beam Processing, edited by J. S. Williams and J. M. Poate (Academic Press, New York, 1984), p. 13.

    CAS  Article  Google Scholar 

  3. 3.

    R. R. Hart, H. L. Dunlap and O. J. Marsh, Rad. Effects 9, 261 (1971); J. M. Williams, C. J. McHargue and B. R. Appleton, Nucl. Instr. and Meth. 209/210, 317 (1983); H. G. Bohn, J. M. Wiliams, C. J. McHargue and G. M. Begun, J. Materials Res., in press, and references therein.

    CAS  Article  Google Scholar 

  4. 4.

    J. A. Edmond, S. P. Withrow, William Wadlin, and R. F. Davis, Interfaces, Superlattices and Thin Films, edited by John D. Dow, Ivan K. Schuller, and John Hilliard, (Materials Research Society Symposia Proceedings Vol. 77, Pittsburgh, 1987), in press.

  5. 5.

    H. P. Liaw and R. F. Davis, J. Electrochem. Soc. 132, 642 (1985).

    CAS  Article  Google Scholar 

  6. 6.

    Donald S. Gemmell, Rev. Mod. Phys. 46, 217 (1974).

    Article  Google Scholar 

  7. 7.

    Materials Analysis by Ion Channeling, edited by Leonard C. Feldman, J. W. Mayer and S. Thomas Picraux, (Academic Press, New York, 1982), chaps. 4 and 5.

  8. 8.

    See for example, R. E. Whan and G. W. Arnold, Appl. Phys. Lett 17, 378 (1970); V. S. Speriosu, B. M. Paine, and M-A. Nicolet, Appl. Phys. Lett 40, 604 (1982); N. Herbots, B. R. Appleton, T. S. Noggle, S. J. Pennycook, R. A. Zuhr and D. M. Zehner, Semiconductor-Based Heterostructures: Interfacial Structure and Stability, edited by M. L. Green, to be published.

    CAS  Article  Google Scholar 

  9. 9.

    J. H. Barrett, private communication. See also J. H. Barrett, Phys. Rev. 166, 219 (1968).

Download references

Author information

Affiliations

  1. Oak Ridge National Laboratory, TN, 37831, Oak Ridge, USA

    S. P. Withrow, P. J. Maziasz & R. F. Davis

  2. Department of Materials Engineering, North Carolina State University, NC, Box 7907, 27695-7907, Raleigh, USA

    John A. Edmond & H. S. Kong

  3. Oak Ridge Associated Universities, TN, 37831, Oak Ridge, USA

    K. More

Authors
  1. S. P. Withrow
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. K. More
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. John A. Edmond
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. H. S. Kong
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. P. J. Maziasz
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. R. F. Davis
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Withrow, S.P., More, K., Edmond, J.A. et al. Damage Production in B-Sic During Ion Implantation. MRS Online Proceedings Library 74, 373 (1986). https://doi.org/10.1557/PROC-74-373

Download citation