Effects of Impurities on the Kinetics of Nucleation and Growth in Amorphous Silicon

Abstract

The effects of intentionally introduced impurities on the crystallization time, nucleation rate and crystallite growth velocity during solid phase random crystallization of amorphous Si thin films have been determined. Films deposited in UHV onto oxidized Si wafers were subjected to multiple energy ion implantation to introduce uniform distributions of P, B, As, O or F at 0.1–1.0 at.%. Crystallization times and growth velocities were determined over the temperature range 650 to 850°C from time-resolved reflectivity measurements, and nucleation rates were determined from these data using a classical, steady state nucleation and growth model. Strong impurity effects are observed: P, B and As all decrease the nucleation rate but accelerate the growth of crystallites, whereas both 0 and F retard growth while enhancing nucleation. The largest effects are for P, which reduces the nucleation rate more than 100 times at 1% concentration, and F, which increases the rate by roughly the same amount.

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References

  1. 1.

    N. A. Blum and C. Feldman, J. Non-Cryst. Sol. 11, 242 (1972).

    CAS  Article  Google Scholar 

  2. 2.

    U. Koster, Phys. Stat. Sol. A48, 313 (1978).

    Article  Google Scholar 

  3. 3.

    K. Zellama, P. Germain, S. Squelard, and J. C. Bourgoin, J. Appl. Phys. 50, 6995 (1979).

    CAS  Article  Google Scholar 

  4. 4.

    J. A. Roth, S. Kokorowski, G. L. Olson, and L. D. Hess, in Laser and Electron-Beam Interactions With Solids, edited by B. R. Appleton and G. K. Celler (Elsevier Science Publishing Co., 1982), pp. 169–176.

  5. 5.

    C. S. Pai, S. S. Lau, and I. Suni, Thin Solid Films 109, 263 (1983).

    CAS  Article  Google Scholar 

  6. 6.

    G. L. Olson, S. A. Kokorowski, J. A. Roth and L. D. Hess, in Laser-Solid Interactions and Transient Processing of Materials, edited by J. Narayan, W. L. Brown, and R. A. Lemons (Elsevier Science Publishing Co., 1983), p.145.

  7. 7.

    L. Csepregi, E. F. Kennedy, T. J. Gallagher, J. W. Mayer, and T. W. Sigmon, J. Appl. Phys. 48, 4234 (1977).

    CAS  Article  Google Scholar 

  8. 8.

    E. F. Kennedy, L. Csepregi, J. W. Mayer, and T. W. Sigmon, J. Appl. Phys. 48, 4241 (1977).

    CAS  Article  Google Scholar 

  9. 9.

    I. Suni, U. Shreter, M-A. Nicolet, and J. E. Baker, J. Appl. Phys. 56, 273 (1984).

    CAS  Article  Google Scholar 

  10. 10.

    J. S. Williams, in Surface Modification and Alloying. Edited by J. M. Poate, G. Foti, and D. C. Jacobson (Plenum Publishing Corporation, 1983).

  11. 11.

    H. Yamamoto, H. Ishiwara, and S. Furukawa, Appl.Phys.Lett. 46, 268 (1985).

    CAS  Article  Google Scholar 

  12. 12.

    J. W. Christian, in The Theory of Transformations in Metals and Alloys, (Pergamon Press, 1965) p. 21.

  13. 13.

    J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids, vol. 1 (Pergamon Press, 1985).

  14. 14.

    G. L. Olson, J. A. Roth, E. Nygren, A. P. Pogany, and J. S. Williams, (This Proceedings).

  15. 15.

    H. Ishiwara, A. Tamba, H. Yamamoto, and S. Furukawa, Jpn. J. Appl. Phys. 24, L513 (1985).

    Article  Google Scholar 

  16. 16.

    A. Tamba, H. Yamamoto, H. Ishiwara, S. Furukawa, private communication.

  17. 17.

    I. Suni, G. Göltz, M-A. Nicolet and S. S. Lau, Thin Solid Films 93, 171 (1982); I. Suni, G. Göltz, M. G. Grimaldi, M-A. Nicolet and S. S. Lau, Appl. Phys. Lett. 40, 269 (1982).

    CAS  Article  Google Scholar 

  18. 18.

    A. Lietoila, A. Wakita, T. W. Sigmon and J. F. Gibbons, J. Appl. Phys. 53, 4399 (1982).

    Article  Google Scholar 

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Roth, J.A., Olson, G.L. Effects of Impurities on the Kinetics of Nucleation and Growth in Amorphous Silicon. MRS Online Proceedings Library 74, 319 (1986). https://doi.org/10.1557/PROC-74-319

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