Pulsed Laser Induced Melt and Phase Transformation of Ni Silicide Layers on Si Substrate

Abstract

Thermally grown Ni2 Si and NiSi2 layers on <111> Si substrates were irradiated by 40 ns Nd laser pulses in the energy density range 0.3–2.0 J/cm2. The samples were analyzed by time-resolved reflectivity, 2.0 MeV He+ Rutherford backscattering in combination with channeling and by transmission electron microscopy. In the NiSi2/Si system the melt starts at the free surface (1280 K) and propagates towards the inside. Dissolution of substrate silicon atoms occurs when the silicon temperature reaches the liquidus temperature (1400 K). In the Ni2Si/Si samples the melt starts instead at the interface when it reaches the eutectic temperature (1250 K). The subsequent propagation towards the surface is limited by the mass transport of silicon atoms to maintain a composition near that of the eutectic. In some cases the surface may melt also at the congruent melting temperature (1570 K), giving rise after solidification to a quite complex structure. The different behaviour of the two silicides/silicon systems is explained in terms of phase diagram.

This is a preview of subscription content, access via your institution.

References

  1. 1

    M. Von Allmen and S. S. Lau in “Laser annealing of Semiconductors” (J. M. Poate, J. W. Mayer eds.) Academic Press N. Y. (1982) p.439

    Google Scholar 

  2. 2

    M. Ishiwara, S. Saitoh, K. Mitsui, S. Furukawa in “Laser and electron beam solid interactions and material processing” Elsevier, North Holland (N. Y.1981) p.525

    Google Scholar 

  3. 3

    R. Fastow, J. W. Mayer, T. Brot, M. Eizemberg, J. Olowolafe: Appl. Phys. Lett. 46 (1985) 1052

    CAS  Article  Google Scholar 

  4. 4

    J. O. Olowolafe, R. Fastow in “Energy beam-solid interactions and transient thermal processing” (O. K.Biegelsen, G. A.Rozgonyi and C. V.Shank eds.) Mat.Res.Soc. vol.35 (Pittsburg, 1985) p.553

  5. 5

    P. Baeri, S. U. Campisano, F. Priolo, E. Rimini in “Energy beam solid interactions and transient thermal processing” (V. T. Nguyen, A. G. Cullis eds.) Les editions de Physique-MRS-Europe (1985) p.237

    Google Scholar 

  6. 6

    R. T. Tung, J. M. Gibson, D. C. Jacobson, J. M. Poate Appl.Phys.Lett. 43 (1983) p.476

    CAS  Article  Google Scholar 

  7. 7

    M. G. Grimaldi, F. Priolo, P. Baeri, E. Rimini in press Physical Review B

Download references

Author information

Affiliations

Authors

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Baeri, P., Grimaldi, M.G., Priolo, F. et al. Pulsed Laser Induced Melt and Phase Transformation of Ni Silicide Layers on Si Substrate. MRS Online Proceedings Library 74, 211 (1986). https://doi.org/10.1557/PROC-74-211

Download citation