Abstract
We have measured the microwave-induced damage to the near-surface region of silicon for 1.9-μs pulses at a frequency of 2.856 GHz and a pulse power of up to 7.2 MW. Rectangular samples were irradiated in a test section of WR-284 waveguide that was filled with freon to a pressure of 30 psig. Incident, transmitted and reflected powers were monitored with directional couplers and fast diodes. The results of the time-resolved optical measurements show that the onset of surface damage is accompanied by a large increase in the reflected power. Examination of the irradiated surfaces shows that the degree of damage is greatest near the edges of the samples. Using secondary ion mass spectrometry to profile the implanted As, we find that the microwave pulses can melt the near-surface region of the material for pulse powers exceeding a threshold value.
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References
See, for example, Pulsed Laser Processing of Semiconductors, Vol. 23, edited by R. F. Wood, C. W. White and R. T. Young (Academic, New York, 1984); and Laser-Solid Interactions and Transient Thermal Processing, edited by J. Narayan, W. L. Brown and R. A. Lemons (North-Holland, New York, 1983).
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R. B. James, J. Narayan, W. H. Christie, R. E. Eby, O. W. Holland and R. F. Wood, in Energy-Beam Solid Interactions and Transient Thermal Processing, edited by D. K. Biegelsen, G. A. Rozgonyi and C. V. Shank (MRS, Pittsburgh, 1985), p. 413.
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James, R.B., Bolton, P.R., Alvarez, R.A. et al. Time-Resolved and Post-Irradiation Studies of the Interaction of High-Power Pulsed Microwave Radiation with Silicon. MRS Online Proceedings Library 74, 153 (1986). https://doi.org/10.1557/PROC-74-153
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DOI: https://doi.org/10.1557/PROC-74-153