Skip to main content
Log in

Raman Studies of Carrier Activation in Laser Annealed GaAs Capped with Silicon Nitride

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

Carrier concentrations exceeding 1019/cm3 in GaAs implanted with Si (2 × 1014/cm2 @ 140 keV) have been obtained by pulsed laser annealing with either a dye laser (λ = 728 nm) or a XeCl excimer laser (λ = 308 nm). Carrier concentrations were measured by plasmon Raman scattering over a wide range of anneal energy densities. Compared with capless laser annealing, much higher carrier activations were achieved when the annealing laser pulse was incident through a Si3N4 cap.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. C. L. Anderson, Mat. Res. Soc. Symp. Proc. 4, 653 (1982); F. H. Eisen, Ion Implantation and Beam Processing, ed. By J. S. Williams and J. M. Poate, p. 327 (Academic Press, Sidney, 1984).

    Article  CAS  Google Scholar 

  2. See, for example, the recent reviews by S. J. Pearton, J. M. Gibson, D. C. Jacobson, J. M. Poate, J. S. Williams and D. O. Boerma, Mat. Res. Soc. Symp. Proc. 52, p. 351 (1986).

    Article  CAS  Google Scholar 

  3. K. K. Patel, R. Bensalem, M. A. Shahid and B. J. Sealy, Nucl. Instr. and Meth. in Phys. Res. B7/8, 418 (1985); M. A. Shahid, R. Gwilliam and B. J. Sealy, Electron Lett. 21, 729 (1985).

    Article  Google Scholar 

  4. R. Tsu, J. E. Baglin, G. L. Lasher, and J. C. Tsang, Appl. Phys. Lett. 34, 153 (1979); R. L. Mozzi, W. Fabian and F. J. Piekarski, Appl. Phys. Lett. 35, 337 (1979); D. E. Davies, J. P. Lovenko and T. G. Ryan, Appl. Phys. Lett. 37, 612 (1980).

    Article  CAS  Google Scholar 

  5. T. Inada, K. Tokunaga and S. Taka, Appl. Phys. Lett. 35, 546 (1979); J. Fletcher, J. Narayan and D. H. Lowndes, Mat. Res. Soc. Symp. Proc. 2, 421 (1981).

    Article  CAS  Google Scholar 

  6. S. S. Kular, B. J. Sealy, M. H. Badawi, K. G. Stephens, Electron Lett. 15, 414 (1979); M. H. Badawi, B. J. Sealy and K. G. Stephens, Electron Lett. 15, 448 (1979).

    Article  Google Scholar 

  7. A. H. Oraby, Y, Yuba, M. Takai, K. Gamo and S. Namba, Jpn. J. Appl. Phys. 23, 326 (1984); S. Nojima, J. Appl. Phys. 53, 5028 (1982); S. Nojima 52, 7445 (1981).

    Article  CAS  Google Scholar 

  8. D. C. Jacobson, S. J. Pearton, R. Hull, J. M. Poate and J. S. Williams, Mat. Res. Soc. Symp. Proc. 52 (1986).

  9. Preliminary results were reported in S. C. Abbi, H. D. Yao, F. Hashmi, A. Bhat, A. Compaan, C. Leak and D. Langer, Bull. Am. Phys. Soc. 31, 274 (1986).

    Google Scholar 

  10. D. E. Aspnes and A. A. Studna, Phys. Rev. B27, 985 (1983).

    Article  CAS  Google Scholar 

  11. M. L. Theye and A. Gheorghiu, Solar Energy Materials 8, 331 (1982).

    Article  CAS  Google Scholar 

  12. J. F. Gibbons, W. S. Johnson and S. W. Mylorie, Projected Range Statistics Semiconductors and Related Materials (2nd ed.) (Dowden, Hutchinson and Ross, Stoudsburg, PA, 1975).

    Google Scholar 

  13. D. H. Auston, CM. Surko, T. N.C. Venkateswaran, R. E. Slusher and J. A. Golovchenko, Appl. Phys. Lett. 33, 437 (1978).

    Article  CAS  Google Scholar 

  14. H. D. Yao, A. Compaan and E. B. Hale, Sol. State Commun. 56, 677 (1985).

    Article  CAS  Google Scholar 

  15. Landoldt-Bornstein New Series 17a––”Semiconductors: Physics of Group IV and III-V Semiconductors,” Springer-Verlag, Berlin (1982).

  16. J. M. Woodall and J. L. Freeouf, J. Vac. Sci. Technol. 19, 794 (1981).

    Article  CAS  Google Scholar 

  17. H. Shen, F. H. Pollak and R. M. Sacks, Spectroscopic Characterization Techniques for Semiconductor Technology II (1985) (SPIE Vol. 524 (p. 145.

  18. S. M. Sze, Semiconductor Devices Physics and Technology (Wiley, New York) 1985, P. 160.

    Google Scholar 

  19. See, for example, the review by G. Abstreiter, M. Cardona and A. Pinczuk in Light Scattering In Solids IV (Springer Topics in Applied Physics, Vol. 54) (Springer, New York, 1984).

  20. H. R. Chandrasekhar and A. K. Ramdas, Phys. Rev. B21, 1511 (1980).

    Article  CAS  Google Scholar 

  21. L. A. Christel, J. F. Gibbons, and S. Mylroie, J. Appl. Phys. 51, 6176 (1980).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Compaan, A., Abbi, S.C., Yao, H.D. et al. Raman Studies of Carrier Activation in Laser Annealed GaAs Capped with Silicon Nitride. MRS Online Proceedings Library 74, 147 (1986). https://doi.org/10.1557/PROC-74-147

Download citation

  • Published:

  • DOI: https://doi.org/10.1557/PROC-74-147

Navigation