Raman Studies of Carrier Activation in Laser Annealed GaAs Capped with Silicon Nitride


Carrier concentrations exceeding 1019/cm3 in GaAs implanted with Si (2 × 1014/cm2 @ 140 keV) have been obtained by pulsed laser annealing with either a dye laser (λ = 728 nm) or a XeCl excimer laser (λ = 308 nm). Carrier concentrations were measured by plasmon Raman scattering over a wide range of anneal energy densities. Compared with capless laser annealing, much higher carrier activations were achieved when the annealing laser pulse was incident through a Si3N4 cap.

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Compaan, A., Abbi, S.C., Yao, H.D. et al. Raman Studies of Carrier Activation in Laser Annealed GaAs Capped with Silicon Nitride. MRS Online Proceedings Library 74, 147 (1986). https://doi.org/10.1557/PROC-74-147

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