Faster Quenching by Silicon Pulsed Laser Annealing Under Water


A novel method of pulsed laser processing of ion-implanted silicon is presented, in which samples are irradiated in water ambient. The water layer in contact with the silicon during irradiationh as a considerable influence on melting and solidificationd ynamics. Still, perfect epitaxy of a thin amorphous layer can be obtained using this method.

For epitaxy to occur on a sample irradiated under water, 40 % more absorbed energy is necessary than for a sample irradiated in air. This indicates the occurrence of a considerable heat-flow from the silicon into the water layer during the laser pulse. From impurity redistribution after irradiation it is found that by processing a sample under water liquid-phase diffusion is reduced. Diffusion theory arguments indicate that this can be due to a reduction in total melt duration by about afactor 2–3. This can be due to faster cooling of the liquid silicon layer after the laser pulse whereas the melt-in time might be influenced as well. As a consequence, shallower impurity profiles can be obtained in crystalline silicon. No oxygen incorporation is detected and the surface morphology is not disturbed using this new process.

This is a preview of subscription content, access via your institution.


  1. 1

    Laser Annealing of Semiconductors, edited by J. M. Poate and J. W. Mayer (Academic Press, New York, 1982).

  2. 2

    For a review of the current literature, see other volumes in this series, Mat. Res. Soc. Symp. Proc. 1, 4, 13, 23, 35, 51 (1981–1986)

  3. 3

    J. J.P. Bruines, R. P.M. van Hal and H. M.L Boots, A. Polman and F. W. Saris, Appl. Phys. Lett. 49, 1161 (1986)

    Article  Google Scholar 

  4. 4

    C. W. White, P. P. Pronko, S. R. Wilson, B. R. Appleton, J. Narayan and R. T. Young, L Appl. Phys. 50, 3261 (1979)

    CAS  Article  Google Scholar 

  5. 5

    L Narayan, C. W. White, O. W. Holland and M. J. Aziz, J. Appl. Phys. 56, 1821 (1984)

    CAS  Article  Google Scholar 

  6. 6

    S. H. Kodera, Jap. L Appl. Phys. 2, 212 (1965)

    Article  Google Scholar 

  7. 7

    A. G. Cullis, H. C. Webber and P. Bailey, J. Phys.E: Sci. Instrum. 12 (1979) 688

    CAS  Article  Google Scholar 

  8. 8

    Backscattering Spectrometry, W.-K. Chu, J. W. Mayer and M.-A. Nicolet (Academic Press, New York, 1978)

  9. 9

    Semiconductors and Semimetals, Vol. 23, Pulsed laser Processing of Semiconductors, edited by R. F. Wood, C. White and R. T. Young (Mc Graw Hill, New York, 1984)

  10. 10

    S. B. Ogale, A. Polman, F. O.P Quentin, S. Roorda and F. W. Saris, accepted for publication in Appl. Phys. Lett.

  11. 11

    Z. L. Wang, J. F.M. Westendorp and F. W. Saris, Nucl. Instr. Meth. 211 (1983) 193

    CAS  Article  Google Scholar 

Download references

Author information



Rights and permissions

Reprints and Permissions

About this article

Cite this article

Polman, A., Roorda, S., Ogale, S.B. et al. Faster Quenching by Silicon Pulsed Laser Annealing Under Water. MRS Online Proceedings Library 74, 129 (1986).

Download citation