The Pile-Ups Of Aluminum And Boron In The Sige(C)


Dopants diffusion, activation and pile-up due to rapid thermal annealing of implanted Al and B in a thin (∼200Å) Si cap layer on top of Si1-x-yGexCy layer were studied. Experimental results show that both the lattice strain and differential diffusion flux can cause atomic pile-up at the interface and the evidences of those effects were shown independently to each other in this paper. In addition, the pile-up can be extended from the interface to the surface by incorporating C in the underlying layer where B diffusion is much less than in the cap Si. Material analysis shows that both B atomic and activated concentrations in the Si cap layer are increased by 50 %, which suggests that the dopant activation can be increased and junction depth can be decreased at the same time using the inserted Si1-x-yGexCy diffusion blocking layer.

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This work was supported in part by the Semiconductor Research Corporation, TI, Applied Materials and the Texas Advanced Technology and Research Program.

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Correspondence to Hong-Jyh Li.

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Li, HJ., Onsongo, D., Kirichenko, T.A. et al. The Pile-Ups Of Aluminum And Boron In The Sige(C). MRS Online Proceedings Library 737, 81 (2002).

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