Dopants diffusion, activation and pile-up due to rapid thermal annealing of implanted Al and B in a thin (∼200Å) Si cap layer on top of Si1-x-yGexCy layer were studied. Experimental results show that both the lattice strain and differential diffusion flux can cause atomic pile-up at the interface and the evidences of those effects were shown independently to each other in this paper. In addition, the pile-up can be extended from the interface to the surface by incorporating C in the underlying layer where B diffusion is much less than in the cap Si. Material analysis shows that both B atomic and activated concentrations in the Si cap layer are increased by 50 %, which suggests that the dopant activation can be increased and junction depth can be decreased at the same time using the inserted Si1-x-yGexCy diffusion blocking layer.
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D. K. Nayak and J. C. S. Woo, “Enhanced-Mode Quantum-Well GexSi1-x PMOS,” IEEE Elect. Device Lett., vol. 12, pp. 154, 1991.
N. Moriya, L. C. Feldman, H. S. Luftman, C. A. King, J. Bevk, and B. Freer, “Boron Diffusion in Strained Si1-xGex Epitaxial Layers,” Phys. Rew. Lett., vol. 71, pp. 883, 1993.
Y.-C. Yeo, Q. Lu, T.-J. King, and C. Hu, “Enhanced Performance in Sub-100 nm CMOSFETs using Strained Epitaxial Silicon-Germanium,” International Electron Devices Meeting (IEDM), pp. 32_05, 2001.
S. I. A. (SIA), International Technology Roadmap for Semiconductors, 2001.
R. F. Lever, J. M. Bonar, and A. F. W. Willoughby, “Boron diffusion across silicon-silicon germanium boundaries,” J. Appl. Phys., vol. 83, pp. 1988, 1998.
H.-J. Li, P. Kohli, S. Ganguly, T. A. Kirichenko, Sanjay Banerjee, P. Zeitzoff, and K. Torres, “Boron Diffusion and Activation in the Presence of Other Species,” presented at International Electron Devices Meeting, 2000.
C. Li, S. John, E. Quinones, and S. Banerjee, J. Vacuum Sci. Technol. A, vol. 14, pp. 170, 1996.
Y. Tajima, K. Kijima, and W. D. Kingery, J. Chem. Phys., vol. 77, pp. 2592, 1982.
T. T. Fang, W. T. C. Fang, P. B. Griffin, and J. D. Plummer, “Calculation of the fractional interstitial component of boron diffusion and segregation coefficient of boron in Si0.8Ge0.2,” Appl. Phys. Lett., vol. 68, pp. 791, 1996.
H.-J. Li, T. A. Kirichenko, P. Kohli, S. K. Banerjee, E. Graetz, R. Tichy, and P. Zeitzoff, “Boron Retarded Diffusion in the Presence of Indium or Germanium,” will be appeared in IEEE Electron Device Letters, Nov. 2002.
This work was supported in part by the Semiconductor Research Corporation, TI, Applied Materials and the Texas Advanced Technology and Research Program.
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Li, HJ., Onsongo, D., Kirichenko, T.A. et al. The Pile-Ups Of Aluminum And Boron In The Sige(C). MRS Online Proceedings Library 737, 81 (2002). https://doi.org/10.1557/PROC-737-F8.1