Fabrication of Si-Ge Compound Nanowires by the FZ Melting Vapor Method

Abstract

A simple method, floating zone melting vapor, was used for fabricating nanowires of Si-Ge material. Single-crystalline nanowires were successfully synthesized. TEM images of these nanowires indicated that each nanowire consists of an inner single-crystalline core and an outer layer. An observation using high-resolution transmission electron microscopy (HRTEM) showed that almost all nanowires have a similar growth orientation to the crystalline core: [210]. The coexistence of germanium-self-catalyzed and oxide-assisted mechanisms has also been suggested.

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Acknowledgments

A part of this study was financially supported by the Budget for Nuclear Research of the Ministry of Education, Culture, Sports, Science and Technology, based on the screening and counseling by the Atomic Energy Commission.

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Correspondence to Quanli Hu.

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Hu, Q., Araki, H., Suzuki, H. et al. Fabrication of Si-Ge Compound Nanowires by the FZ Melting Vapor Method. MRS Online Proceedings Library 737, 331 (2002). https://doi.org/10.1557/PROC-737-F3.31

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